BD201F NJSEMI | Alldatasheet

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Technical content

j , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BD201F/203F

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR)cEo = 45V(Min)- BD201F 60V(Min)- BD203F
  • Complement to Type BD202F/204F '

APPLICATIONS

  • Designed for use in hi-fi equipment delivering an output of 1 5 to 15 W into a 4 n or 8 o load. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage BD201F BD203F BD201F BD203F Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rfh j-c PARAMETER MAX Thermal Resistance, Junction to Case 6.3 UNIT
  • c/w f | PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220Fa package i t i lu I H I c — f "*"»-( DIM! A B C D F G LJ J K L N R S II V mm MIN 16.85 9.90 4.35 0.75 3.20 6.90 5.15 0.45 13,35 1.10 4.98 4.85 2.95 2.70 1,75 1.30 MAX 17.15 10.10 4.65 0,80 3.40 7.10 545 0.75 13.65 1.30 5.1 S 5.15 3.25 2.90 2.05 1.50 f *- -*-L N.I Semi-CoiiiliiLtors reserves the right to change test conditions, parameter limits and package Jimen.sions \\vithout notice. Information Himi.sheJ by N.I Seini-Coiuluctors is believed to he both accurate and reliable at the time ol w.ing to prcsv However. N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its u.se. * N.I Scmi-Ct'iidiiciors ciicnurajies customers to verily that datasheets are current heforc placing orders. Qualify Semi-Conductors

Silicon NPN Power Transistor BD201F/203F

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat)-1 VcE(sat)-2 VBE(sat) VBE(QP) ICEO ICBO IEBO hpE-1 hFE-2 ft PARAMETER Collector-Emitter Breakdown Voltage BD201F BD203F' Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain BD201F BD203F DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=1mA;le=0 lE=1mA;lc=0 lc= 3A; IB= 0.3A lc= 6A; IB= 0.6A lc= 6A; IB= 0.6A lc= 3A ; VCE= 2V VCE= 30V; IB= 0 VCB=VCBO;|E=O VcB=1/2VcBo;lE=0;Tj=150-C VEB= 5V; lc=0 lc=3A;VCE=2V lc=2A;VCE=2V lc=1A;VCE=2V lc= 0.3A ; VCE= 3V, ftest= 1 -0MHz MIN 7.0 MAX 1.0 1.5 2.0 1.5 0.2 0.1 1.0 0.5 UNIT V V V V V V V mA mA mA MHz Switching Times ton W Turn-On Time Turn-Off Time u s u s