BD00EA5WEFJ-E2 | DigiCamel IC Datasheet

Online Datasheet

Read BD00EA5WEFJ-E2 online.

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 12

Technical content

www.rohm.com 2010.04 - Rev.A © 2010 ROHM Co., Ltd. All rights reserved. Secondary Variable Output LDO Regulator Series for Local Power Supplies 300mA Secondary Variable Output LDO Regulators for Local Power Supplies BD00GA3WEFJ

Description BD00GA3WEFJ is a LDO regulator with output current 0.3A. The output accuracy is ±1% of output voltage. With external resistance, it is available to set the output voltage at random (from 1.5V to 13.0V) and also provides output voltage fixed type without external resistance. It is used fo r the wide applications of digital appliances. It has package type: HTSOP-J8. Over current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting the circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load condition) are all built in. It is us able for ceramic capacitor and enables to improve smaller set and long-life.
Features 1) Output current 0.3A 2) High accuracy reference voltage circuit 3) Built-in Over Current Protection circuit (OCP) 4) Built-in Thermal Shut Down circuit (TSD) 5) With shut down switch 6) Output voltage variable type (1.5V to 13.0V) 7) Package: HTSOP-J8
Output voltage differential Line up Signal Description a Output voltage (V)

00 Variable

b Voltage resistance(V) E 24V H 10V F 20V I 7V G 15V c Output current (A) A1 0.1A C0 1.0A A3 0.3A C5 1.5A A5 0.5A D0 2.0A d Shutdown switch “W” Shutdown switch is built in “ ” Shutdown switch is not built in e Package EFJ HTSOP-J8 Product name Variable Package BD00GA3WEFJ ○ HTSOP-J8 No.10026EAT05 Product name : BD00GA3WEFJ a b c d e

Absolute Maximum Ratings (Ta=25℃) *1 Not to exceed Pd *2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25 ℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
Operating conditions (Ta=25℃) Parameter Symbol Min. Max. Unit Input power supply voltage Vcc 4.5 14.0 V EN voltage V EN 0.0 14.0 V Output voltage setting range Vo 1.5 13.0 V Output current Io 0.0 0.3 A This product should not be used in a radioactive environment.
Electrical Characteristics (Unless otherwise noted, Ta=25℃, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ) Parameter Symbol Min. Typ. Max. Unit Conditions Circuit current at shutdown mode Isd - 0 5 μA EN=0V, OFF mode Bias current Icc - 600 900 μA Line regulation Reg.I - 25 50 mV Vcc=( Vo+0.9V ) →14.0V Load regulation Reg Io - 25 75 mV Io=0 →0.3A Minimun dropout Voltage Vco - 0.6 0.9 V Vcc=5V,Io=0.3A Output reference voltage V FB 0.792 0.800 0.808 V Io=0mA EN Low voltage V EN (Low) 0 - 0.8 V EN High voltage V EN (High) 2.4 - 14.0 V EN Bias current IEN 1 3 9 μA
I/O Equivalent circuits Parameter Symbol Limits Unit Power supply voltage Vcc 15.0 * 1 V EN voltage V EN 15.0 V Output voltage V OUT 15.0 V Feedback voltage V FB 15.0 V Power dissipation HTSOP-J8 Pd *2 2110 *2 mW Operating Temperature Range Topr -25 ～+85 ℃ Storage Temperature Range Tstg -55 ～+150 ℃ Junction Temperature Tjmax +150 ℃ 8pin(VCC) / 1pin(VO) 2pin(FB) 5pin(EN) Vcc 5pin(EN) 2pin(FB) Vcc 8pin(Vcc) 1pin(Vo)

www.rohm.com 2010.04 - Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD00GA3WEFJ Technical Note Vo 50mV/div Io 0.2A/div Vo 50mV/div Io 0.2A/div Vcc 5V/div Vo 5V/div VEN 2V/div 40ｍsec/div10usec/div 200usec/div

Reference Data (Unless otherwise noted, Ta=25℃, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ) 400 500 600 700 800 -25 0 25 50 75 Ta [℃] Icc [uA] 0.0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 8 10 12 14 Vcc [V] Isd [μA] 4.8 4.9 5.0 5.1 5.2 0 0.1 0.2 0.3 io [A] Vo [V] 0.0 0.2 0.4 0.6 0.8 1.0 -25 0 25 50 75 Ta [℃] Icc [uA] 4.8 4.9 5.0 5.1 5.2 -25 0 25 50 75 Ta [℃] Vo [V] 0.0 2.0 4.0 6.0 8.0 -25 0 25 50 75 Ta [℃] Ien [μA] 85 85 Fig.11 Io-Vo Fig.10 Ta-IEN Fig.7 Ta-Vo (Io=0mA) Fig.8 Ta-Icc Fig.9 Ta-Isd (VEN=0V) Fig.12 Vcc-Isd (VEN=0V) Vcc 5V/div Vo 5V/div VEN 2V/div Vcc 5V/div Vo 5V/div VEN 2V/div Vcc 5V/div Vo 5V/div VEN 2V/div Fig.4 OFF sequence 1 Co=1μF Fig.5 Inpurt sequence 2 Co=1μF Fig.6 OFF sequence 2 Co=1μF 40msec/div1ｍsec/div40msec/div Fig.1 Transient Response (0→0.3A) Co=1μF Fig.2 Transient Response (0.3→0A) Co=1μF Fig.3 Input sequence 1 Co=1μF

Reference Data 0.1 0.2 0.3 0.4 0.5 0.6 00 . 1 0 . 2 0 . 3 Io [A] Vdrop [V] 10 0 0 . 111 0 1 0 0 周波数［KHz］ PSRR［dB］ 0 0.2 0.4 0.6 0.8 Io〔A〕 Vo〔V〕 Fig.13 Vcc-Vo (Io=0mA) Fig.14 TSD (Io=0mA) 0.0 2.0 4.0 6.0 100 120 140 160 180 200 Ta [℃] Vo [V] Fig.15 OCP Fig.16 Minimum dropout Voltage1 （Vcc=5V、Io=-0.3A） Fig.18 Io-Icc Fig.17 ESR condencer Fig.19 PSRR(Io=0mA) Fig.20 Minimum dropout Voltage 2 （Vcc=4.5V、Ta=25℃） Fig.21 Minimum dropout Voltage 3 （Vcc=6V、Ta=25℃） Fig.22 Minimum dropout Voltage 4 （Vcc=8V、Ta=25℃） Fig.23 Minimum dropout Voltage 5 （Vcc=10V、Ta=25℃） Fig.24 Minimum dropout Voltage 6 （Vcc=12V、Ta=25℃） Frequency[KHｚ] 0.01 0.10 1.00 10.00 0 0.1 0.2 0.3 Io [A] ESR [Ω] ] Safety area 0.2 0.3 0.4 0.5 0.6 -25 0 25 50 75 Ta [℃] Vdrop [V] 0.1 0.2 0.3 0.4 0.5 0.6 00 . 1 0 . 2 0 . 3 Io[A] Vdrop [V] 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 Io[A] Vdrop [V] 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 Io [A] Vdrop [V] 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 Io [A] Vd rop [V] 400 500 600 700 800 900 0 0.1 0.2 0.3 Io[A] Icc[μA]

Heat Dissipation Characteristics ◎HTSOP-J8
About Input-to-output capacitor It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND. A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes improvement of characteristics by load change. However, please check by mo unted on a board for the actual application. Ceramic capacitor usually has difference, thermal characterist ics and series bias characteristics, and mo reover capacity decreases gradually by using conditions. For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor. -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 2 3 4 DC Bias Voltage [V]

10 Voltage resistance

B characteristics 6.3 Voltage resistance B characteristics

4 Voltage resistance

Ceramic capacitor capacity- DC bias characteristics (Characteristics example) Capacitance Change [%] 0 25 50 75 100 125 150 2.0 3.0 4.0 ①0.50W 許容損失:Pd [W] 周囲温度:Ta [℃] 1.0 ①0.50W ②0.82W ③1.10W ④2.11W ⑤3.76W Measure condition: mounted on a ROHM board, and IC Substrate size: 70mm × 70mm × 1.6mm (Substrate with thermal via) ・Solder the substrate and package reverse exposure heat radiation part ① IC only θj-a=249.5℃/W ② 1-layer （copper foil are :0mm×0mm） θj-a=153.2℃/W ③ 2-layer （copper foil are :15mm×15mm） θj-a=113.6℃/W ④ 2-layer （copper foil are :70mm×70mm） θj-a=59.2℃/W ⑤ 4-layer （copper foil are :70mm×70mm） θj-a=33.3℃/W Power Dissipation :Pd [W] Ambient Temperature :Ta [℃]

Heat Loss Thermal design should allow operation within the following condi tions. Note that the temperat ures listed are the allowed temperature limits, and thermal design should allow sufficient margin from the limits. 1. Ambient temperature Ta can be no higher than 85℃. 2. Chip junction temperature (Tj) can be no higher than 150℃. Chip junction temperature can be determined as follows: Most of the heat loss that occurs in the BD00GA3WEFJ is generated from the output Pch FET. Power loss is determined by the total V cc-Vo voltage and output current. Be sure to confirm the system input and output volt age and the output current conditions in relation to the heat dissipation characteristics of the V IN and Vo in the design. Bearing in mind that heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in the BD00GA3WEFJ make certain to factor conditions such as substrate size into the thermal design. Power consumption (W) = Input voltage (VCC)- Output voltage (Vo) ×Io(Ave) Example) Where VCC=5.0V, VO=3.3V, Io(Ave) = 0.1A, Power consumption (W) = 5.0(V)-3.3(V) ×0.1(A) =0.17(W)
About equivalent series resistance ESR (ceramic capacitor etc.) ① Calculation based on ambient temperature (Ta) Tj=Ta+θj-a×W ＜Reference values＞ 1-layer substrate (copper foil density 0mm ×0mm) 2-layer substrate (copper foil density 15mm ×15mm) 2-layer substrate (copper foil density 70mm ×70mm) 4-layer substrate (copper foil density 70mm×70mm) Substrate size: 70 ×70×1.6mm3 (substrate with thermal via) θj-a: HTSOP-J8 153.2 ℃/W 113.6 ℃/W 59.2 ℃/W 33.3 ℃/W Capacitor usually has ESR （Equivalent Series Resistance ）, and operates stable in ESR-OUT range, showed right. Generally, ESR of ceramic, tantalum and electronic capacitor etc. is different for each, so please be sure to check a capacitor which is going to use, and use it inside the stable range, showed right. Then, please evaluate for the actual application. Stable area characteristics (Characteristics example) Capacity-Bias characteristics 0.01 0.1 100 0 50 100 150 200 IOUT [mA] ESR [Ω]

Block Diagram B D 0 0 G A 3 W E F J
Pin number ・ Pin name Pin No. Pin name Pin Function

1 VOUT Output voltage pin

2 FB Feedback pin

3 GND GND pin

4 N.C. Non Connection

5 EN Enable pin

6 N.C. Non Connection 7 N.C. Non Connection

8 VCC Input voltage pin

Reverse FIN Substrate(GND pin) GND EN TSD OCP SOFT Ceramic C a p a c i t o r VO VCC FB Ceramic C a p a c i t o r ≧ 1μF ≧ 1μF 1.5V to 13.0V (VO+0.90) to 14.0V

Evaluation Board Circuit
Evaluation Board Parts List
About Board Layout ･Input capacitor Cin of VCC (Vin) should be placed very close to VCC(Vin) pin as possible, and used broad wiring pattern. Output capacitor Co also should be placed close to IC pin as possible. In case connected to inner layer GND plane, please use several through hole. ・VFB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as possible. Please be careful in wiring drawing ・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency. ・For output voltage setting Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2. （The use of resistors with R1+R2=5k to 90k is recommended） Designation Value Part No. Company Designation Value Part No. Company R1 43k Ω MCR01PZPZF4302 ROHM C4 ‐ ‐ ‐ R2 8.2k Ω MCR01PZPZF8201 ROHM C5 1uF CM105B105K16A KYOCERA R3 ‐ ‐ ‐ C6 C1 1uF CM105B105K16A KYOCERA C10 ‐ ‐ ‐ C2 ‐ ‐ U1 ‐ BD00GA3WEFJ ROHM VO EN GND VCC(Vi n) Cin R1 R2 Co N.CGND FB N.C N.C. VOUT VOUT Gate C10

1 VCC

VO = VFB× R1+R2

Operation Notes (1). Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. (2). Connecting the power supply connector backward Connecting of the power supply in reverse polarity can da mage IC. Take precautions when connecting the power supply lines. An external direction diode can be added. (3). Power supply lines Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures. (4). GND voltage The potential of GND pin must be minimum potential in all operating conditions. (5). Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. (6). Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on print ed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. (7). Actions in strong electromagnetic field Use caution when using the IC in the pr esence of a strong electromagnetic fiel d as doing so may cause the IC to malfunction. (8). ASO When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO. (9). Thermal shutdown circuit The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent thermal runaway. It is no t designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. (10). Testing on application boards When testing the IC on an application board, connecting a capaci tor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before connecting it to or removing it from a jig or fixture during the inspection proc ess. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. TSD ON Temperature[ ℃] (typ.) Hysteresis Temperature [ ℃] (typ.) BD00GA3WEFJ 175 15

www.rohm.com 2010.04 - Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD00GA3WEFJ Technical Note (11). Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interf erence among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. (12). Ground Wiring Pattern. When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistanc e and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. Resistor Transistor (NPN) N N N P+ P + P P substrate GND Pin A N N P+ P+ P P substrate GND Parasitic element Pin B C B E N GND Pin A Pin B Other adjacent elements E B C GND Parasitic element Parasitic element

Type Designations (Ordering Information) B D 0 0 G A 3 W E F J - E 2 ROHM Part Number Output voltage 00 : Variable Voltage resistance E:24V F:20V G:15V H:10V I:7V Output cuurent A1:0.1A A3:0.3A A5:0.5A C0:1.0A C5:1.5A D0:2.0A Shutdown switch “W”：Built in ”：None Package EFJ ：HTSOP-J8 Packaging specifications E2:Emboss tape reel (Unit : mm) HTSOP-J8 0.08 S 0.08 M S 1.0MAX 0.85±0.05 1.27 0.08±0.08 0.42 +0.05 -0.04 1.05±0.2 0.65±0.15 4°+6° −4° 0.17 +0.05 -0.03 234 568 (MAX 5.25 include BURR) 0.545 (3.2) 4.9±0.1 6.0±0.2 (2.4) 3.9±0.1 1PIN MARK ∗ Order quantity needs to be multiple of the minimum quantity. <Tape and Reel information> Embossed carrier tapeTape Quantity Direction of feed The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs Direction of feed Reel 1pin

R1010Awww.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redunda ncy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Product Information

BD00EA5WEFJ-E2 specifications and overview.

Summary

300mA Secondary Variable Output LDO Regulators for Local Power Supplies

Description

300mA Secondary Variable Output LDO Regulators for Local Power Supplies

Source title BD00EA5WEFJ-E2 Datasheet(PDF) - Rohm

Related Parts

More parts from the same family.

Browse manufacturer