BAX12 NJSEMI | Alldatasheet
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New Jersey Semi-Conductor Products, Ine. SSS 20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 Controlled avalanche diode BAX12 TS FEATURES DESCRIPTION ¢ Hermetically sealed leaded glass The BAX12is a controlled avalanche diode fabricated in planar technology, and SOD27 (DO-35) package encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) © Switching speed: max. 50 ns Package. - © General application © Continuous reverse voltage: max. 90 V «Repetitive peak reverse voltage: max. 90 V « Repetitive peak forward current: k a max. 800 mA oe —— + « Repetitive peak reverse current: max. 600 mA * Capable of absorbing transients repetitively. Marking code: BAX12. APPLICATIONS Simplified outline (SOD27; D035) and symbol. © Switching of inductive loads in semi-electronic telephone exchanges. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). [svmeor[ __arawever [| conpmions [mins | wax. [unr | [Var [repetitive peakreverse voltage [Tv [Va____ [continuous reversevottage [TT ov [te [continuous forward current [see Fig2inote2 |= | 400 [ma [lem [repetitive peak forward current [Tf 800 [mA non-repetitive peak forward current | square wave; Tj = 25 °C prior to surge; see Fig.4 t=1ps 55 A t= 100 us 15 OIA t=10ms 9 A [Pa [teal power dissipation [Twa =25-Cinaie@ || #80 |mw | [iw [repetive peakreversecarent [~~~ 200 ma | [Ena [repetve peak reverse enery [p= S0uaitaz0Hm T= 25° | - | 50 [mi _| [Tap [store torpersie | SSS*dC OC [7 [iunetion temperature +f Sid | 00
Controlled avalanche diode BAX12
ELECTRICAL CHARACTERISTICS
T| = 25 °C; unless otherwise specified. SYMBOL PARAMETER ConpiTIONs | MIN. | MAX. | UNIT | Ve forward voltage see Fig.3 le =10 mA 750 |mv lp = 50 mA 840 [mv lp = 100 mA 900 [mv le = 200 mA 1.0 |V le = 400 mA 1.25 |V reverse current see Fig.5 Vr =90V 100 |nA : Vp = 90 V; Ty = 150°C 100 [yA [Venn [reverse avalanche breakdownvolageIa=1ma + iad [ 170 |v __| Ca diode capacitance f= 1 MHz; Vp =0, see Fig.6 tr reverse recovery time when switched from Ip = 30 mA to Ip = 30 mA; R, = 100 Q; measured at lz = 3 mA; see Fig.10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT | thermal resistance from junction to tie-point [lead length 10 mm [| 240 | KW | [Rnja | thermal resistance from junction to ambient [lead length 10 mm; note 1 Note 1, Device mounted on a printed circuit-board without metallization pad. PACKAGE OUTLINE tos =o} — 056 cael arena 254 min —e) mae Dimensions in mm. $OD27 (DO-35).