BAW101 SIEMENS | Alldatasheet
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Technical content
Silicon Switching Diode Array BAW 101 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAW 101 Q62702-A712JPs SOT-143 Parameter Symbol Values Unit Reverse voltage VR 300 V Forward current IF 250 mA Junction temperature Tj 150 ˚C Total power dissipation,TS ≤ 35 ˚C Ptot 350 mW Storage temperature range Tstg – 65 … + 150 Peak reverse voltage VRM 300 Surge forward current,t = 1µs IFS 4.5 A Peak forward current IFM 500 Thermal Resistance Junction - ambient2) Rth JA ≤ 470 K/W Junction - soldering point Rth JS ≤ 330 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- Electrically insulated high-voltage medium-speed diodes 5.91
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator:tp = 100 ns,D = 0.05 Oscillograph: R = 50Ω tr = 0.6 ns,Rj = 50Ω tr = 0.35 ns C ≤ 1p F UnitValuesParameter Symbol min. typ. max. DC characteristics VBreakdown voltage I(BR) = 100µA V(BR) 300 – – nA µA Reverse current VR = 250 V VR = 250 V,TA = 150 ˚C IR 150 AC characteristics µsReverse recovery time IF = 10 mA,IR = 10 mA,RL = 100Ω measured atIR = 1 mA trr –1– Forward voltage IF = 100 mA VF – – 1.3 pFDiode capacitance VR = 0,f = 1 MHz C D –6–
Forward currentIF = f(TA*;TS) * Package mounted on epoxy Reverse currentIR =f(TA) Forward currentIF = f(VF) TA = 25 ˚C