BAV100 HDSEMI | Alldatasheet
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H igh Diode Semiconductor MINI MELF(SOD- 8 0 / LL- 3 4 ) MINI MELF Glass-Encapsulate Diodes Small Signal Fast Switching Diodes HD DL10 Extreme fast switches B AV10 0 - B AV10 3 R 50-200V F 250mA B AV Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V I F mA 60Hz Half-sine wave, Resistance 250 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 1 Junction Temperature T J -55~+175 Storage Temperature T STG ℃ -55 ~ +175 50 150100 load, Ta=25 V V R tot PPower Dissipation mW 400 10 0 10 1 10 2 10 3 200 Repetitive Peak Reverse Voltage 60 200120 250 Forward current
Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Item Symbol Unit Test Condition Peak Forward Voltage V FM V I FM =2 00 mA I RRM Ta=25℃ 0.1 Peak Reverse Current uA V RM R Max 1.25 Reverse recovery time t rr I FM =1 00 mA 1.00 C d p FDiode capacitance VR=0,f=1MHZ IF=30mA to IR=30mA, Irr=3mA,RL=100. Ω ns
H igh Diode Semiconductor MINI MELF MINI MELF 0.146(3.7) 0.130(3.3) 0.063(1.6) 0.055(1.4) 0.020(0.5) 0.012(0.3) 0.020(0.5) 0.012(0.3) Dimensions in millimeters 3.5 1.8 0.7
H igh Diode Semiconductor Packaging Specifications for Surface Mounted Glass Diodes 1. The method of packaging and dimension are shown as below figure. (Dimension in mm) 185 185 105 202 202 545 LS-31 (MicroMELF) LS-34 (QuadroMELF) LL-34 (MiniMELF) DO-213AA(MiniMELF) 2,500 pcs per reel 20,000 pcs per box 8 reels per box 100,000 pcs per carton 5 boxes per carton