BAT85 GE | Alldatasheet
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Technical content
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified max. .150 (3.8) max.∅ Cathode .020 (0.52) Mark max. ∅ .079 (2.0) Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g BAT85 Symbol Value Unit Continuous Reverse Voltage V R 30 V Forward Continuous Current at Tamb = 25 °C I F 2001) mA Peak Forward Current at Tamb = 25 °C I FM 3001) mA Surge Forward Current at tp < 1 s, Tamb = 25 °C IFSM 6001) mA Power Dissipation at Tamb = 65 °C P tot 2001) mW Junction T emperature T j 125 °C Ambient Operating Temperature Range T amb –65 to +125 °C Storage T emperature Range T S –65 to +150 °C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. For general purpose applications. This diode features low turn-on volt- age. The devices are protected by a PN junction guard ring against excessive volt- age, such as electrostatic discharges. This diode is also available in the MiniMELF case with type designation BAS85.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BAT85 Symbol Min. T yp. Max. Unit Reverse Breakdown Voltage tested with 10 µA Pulses V(BR)R 3 0 ––V Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA VF VF VF VF VF 0.5 0.24 0.32 0.4 0.8 V V V V V Leakage Current at V R = 25 V IR ––2 µA Capacitance at VR = 1 V , f = 1 MHz C tot ––1 0 p F Thermal Resistance Junction to Ambient Air R thJA ––0 . 4 3 1) K/mW Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA trr ––5n s 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.