BAT70-05 SIEMENS | Alldatasheet

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Technical content

Semiconductor Group Jun-02-19981 Silicon Schottky Diodes

  • Parallel connection for maximum IF per package
  • Low forward voltage drop
  • For power supply
  • For clamping and protection VPS051631 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 70-05 BAT 70-05 Q62702-A1223 1 = A1 2 n.c. SOT-2233 = A2 4=C1/C2 Maximum Ratings Parameter ValueSymbol Unit Reverse voltage, TS < 75°C 1) VR V50 70VRReverse voltage, TS < 50°C 1) Peak reverse voltage, TS < 70°C, t < 10ms 2) 70VRM Forward current IF 1.5 A Average forward current (50/60Hz, sinus) 1.5IFAV Surge forward current (t< 100ms) IFSM 5 Total power dissipation, TS £ 130 °C Ptot 1.5 W Total power dissipation, both diodes, TS £ 120 °CPtot 3 Junction temperature Tj 150 °C Storage temperature Tstg - 65 ...+150 Maximum Ratings Junction - ambient 1) R thJA £ 82 K/W Junction - soldering point R thJS £12 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 2) see DC/pulse derating curve V R = f (TA) Semiconductor Group 1 1998-11-01

Semiconductor Group Jun-02-19982 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol UnitValues typ. max.min. DC characteristics Reverse current VR = 50 V VR = 70 V IR 100 1000 µA Reverse current VR = 50 V, TA = 75 °C IR - 1 15 mA Forward voltage IF = 1 mA IF = 10 mA IF = 100 mA IF = 1.5 A VF 0.2 0.26 0.33 0.52 0.6 V AC characteristics Diode capacitance VR = 0 V, f = 1 MHz VR = 10 V, f = 1 MHz C T 236 48.8 pF Forward voltage V F = f (TA) for tp = 10ms and 100ms, Duty cycle < 1/100 0 20 40 60 80 100 120 °C 150 TA V VR tp=DC tp=100ms tp=10ms Semiconductor Group 2 1998-11-01