BAT64-W SIEMENS | Alldatasheet

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BAT 64...W Semiconductor Group Sep-07-19981 Silicon Schottky Diodes

  • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
  • Integrated diffused guard ring
  • Low forward voltage VSO05561 BAT 64-05W BAT 64-06WBAT 64-04WBAT 64W ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 64W BAT 64-04W BAT 64-05W BAT 64-06W 63s 64s 65s 66s Q62702-A1159 Q62702-A1160 Q62702-A1161 Q62702-A1162 1 = A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 SOT-3233 = C 3 = C1/A2 3 = C1/2 3 = A1/2 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage 40 VVR Forward current IF mA250 120IFAVAverage forward current (50/60Hz, sinus) Surge forward current (t< 100ms) 800IFSM Total power dissipation BAT 64W, TS£120°C Ptot 250 mW Total power dissipat. BAT64-04/06W, TS£111°C 250Ptot Total power dissipation BAR 64-05W, TS£104°C Ptot 250 150 °CTjJunction temperature Storage temperature Tstg -55...+150 Semiconductor Group 1 1998-11-01

BAT 64...W Semiconductor Group Sep-07-19982 Thermal Resistance Junction - ambient 1) BAT 64W £255 K/WRthJA Junction - ambient 1) BAT 64-04/06W £290RthJA Junction - ambient 1) BAT 64-05W £455RthJA RthJSJunction - soldering point BAT 64W £120 Junction - soldering point BAT 64-04/06WRthJS £155 Junction - soldering point BAT 64-05W RthJS £185 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit max.typ.min. DC characteristics 2-- µAIRReverse current VR = 30 V 200--IRReverse current VR = 30 V, TA = 85 °C 320 385 440 570 Forward voltage IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA VF 350 430 520 750 mV AC characteristics Diode capacitance VR = 1 V, f = 1 MHz CT - 4 6 pF Semiconductor Group 2 1998-11-01

BAT 64...W Semiconductor Group Sep-07-19983 Forward current IF = f (V F) TA = Parameter 0 0.5 1 BAT 64... EHB00057 VF IF V mA AT = -40 125 C C C C Reverse current IR = f (VR ) TA = Parameter 01 02 0 3 0 BAT 64... EHB00058 VR IR V m A AT = 125 C C C Semiconductor Group 3 1998-11-01

BAT 64...W Semiconductor Group Sep-07-19984 Forward current IF = f (TA*; TS) *Package mounted on epoxy BAT 64W 0 20 40 60 80 100 120 °C 150 TA,TS 100 150 200 mA 300 IF TS TA Permissible Pulse Load R thJS = f (tp) BAT 64W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f (tp) BAT 64W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 4 1998-11-01

BAT 64...W Semiconductor Group Sep-07-19985 Forward current IF = f (TA*; TS) * Package mounted on epoxy BAT 64-04/06W 0 20 40 60 80 100 120 °C 150 TA,TS 100 150 200 mA 300 IF TS TA Permissible Pulse Load R thJS = f (tp) BAT 64-04/06 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f (tp) BAT 64-04/06W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 5 1998-11-01

BAT 64...W Semiconductor Group Sep-07-19986 Forward current IF = f (TA*; TS) * Package mounted on epoxy BAT 64-05W 0 20 40 60 80 100 120 °C 150 TA,TS 100 150 200 mA 300 IF TS TA Permissible Pulse Load IFmax / IFDC = f (tp) BAT 64-05W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load R thJS = f (tp) BAT 64-05W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Semiconductor Group 6 1998-11-01