BAT64

BAT64 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） SOT-23 Plastic-Encapsulate Diodes MARKING:66S MARKING65S MARKING:64 S SCHOTTK Y BARRIER DIODE BAT64-04, BAT64-05, BAT64-06 For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage BAT64-06 BAT64-05 BAT64-04 Parameter Symbol Limits Unit Peak reverse voltage DC reverse V RM V R 40 V Non-repetitive Peak forward surge current @t=8.3ms I FSM 0.8 A Forward current I F 0.25 A Power Dissipation P D 250 mW Thermal Resistance Junction−to−Ambient R ΘJA 400 ℃/W Junction temperature T j 125 ℃ Storage temperature T stg -55~+150 ℃ Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse breakdown voltage V R

40 V I

R =10μA Forward voltage V F 350 430 520 750 mV I F =1mA I F =10mA I F =30mA I F =100mA Reverse current I R 2 μA V R =25V Capacitance between terminals C T 6 pF V R =1V,f=1MHz

H igh Diode Semiconductor Typical Characteristics 0 8 16 24 32 40 0 25 50 75 100 125 100 150 200 250 300 100 01 0 2 0 3 0 40 0.1 100 1000 Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) T a =25 f=1MHz Reverse CharacteristicsForward Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) T a =25 T a =100 FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (mA) 800 T a =25 T a =100 REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (uA)

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor