BAT64 SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 Jan-31-1997 BAT 64 Silicon Schottky Diodes Preliminary data
- For low-loss, fast-recovery, meter protection, bias isolation and clamping applications
- Integrated diffused guard ring
- Low forward voltage Pin Configuration BAT 64-04 BAT64-05 BAT64-06 ESD : ElectroStatic D ischarge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 64 63s Q62702-A879 1 = A 3 = C SOT-23 BAT 64-04 64s Q62702-A961 1 = A 2 = C 3 = C/A SOT-23 BAT 64-05 65s Q62702-A962 1 = A 2 = A 3 = C/C SOT-23 BAT 64-06 66s Q62702-A963 1 = C 2 = C 3 = A/A SOT-23 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 40 V Forward current IF 250 mA Average forward current (50/60Hz, sinus)IFAV 120 Surge forward current (t ≤ 10ms) IFSM 800 Total Power dissipation TS = 61 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 55 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 495 K/W Junction - soldering point R thJS ≤ 355 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 25 V, TA = 25 °C VR = 25 V, TA = 85 °C IR 200 µA Forward voltage IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA VF 570 440 385 320 750 520 430 350 mV V AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz C T - 4 6 pF Forward Current IF = f(VF) Reverse current IR = f (VR ) TA = Parameter
Semiconductor Group 3 Jan-31-1997 BAT 64 Diode capacitance C T = f (VR ) f = 1MHz Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64 Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64-04... (IF per diode)