BAT63 SIEMENS | Alldatasheet
Document overview
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Technical content
Semiconductor Group 1 10.94 Type Ordering Code Pin Configuration Marking Package (tape and reel) 1 2 3 4 BAT 63 Q62702-A1004 A1 C2 A2 C1 63 SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 3V Forward current IF 100 mA Junction temperature Tj 150 °C Storage temperature range Tstg – 55 … + 150 °C Thermal Resistance Junction-ambient1) Rth JA ≤ 450 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Silicon Schottky Diode BAT 63
- Low barrier diode for mixer and detectors up to GHz frequencies
Electrical Characteristics
atTA = 25°C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics Reverse current VR =3V IR ––1 0 nA Forward voltage IF =1m A VF – 190 300 mV Diode capacitance VR = 0.2 V,f= 1 MHz C T – 0.65 0.85 pF Case capacitance C C – 0.1 – pF Differential resistance V =0 ,f=1 0k H z –3 0 – kΩ Series inductance LS –2– nH
Forward currentIF = f(VF) Permissible Pulse loadRthJS = f(tp) Forward current IF = f(TS;TA) Permissible Pulse loadIFmax /IFDC = f(tp) TA = 25°C