BAT63-099R SIEMENS | Alldatasheet

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Semiconductor Group 1 Feb-01-1996 BAT 63-099R Silicon Schottky Diodes

  • Zero bias diode array for mixer and detectors up to GHz frequencies
  • Crossover ring quad Type Marking Ordering Code Pin Configuration Package BAT 63-099RSN Q62702-A1105 1 = A 2 = C SOT-143 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 40 V Forward current IF 40 mA Total power dissipation, BAT17W TA ≤ 97°C Ptot mW Total power dissipation, BAT17-04...06W TS ≤ 92°CPtot Junction temperature Tj 150 °C Operating temperature range Top Storage temperature Tstg - 55 ... + 150 Thermal Resistance Junction - ambient, BAT17W R thJA K/W Junction - ambient, BAT17-04W...06W R thJA Junction - soldering poin, BAT17W R thJS Junction - soldering point, BAT17-04W...06WR thJS

Semiconductor Group 2 Feb-01-1996 BAT 63-099R Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) V Reverse current VR = 40 V, TA = 25 °C IR - - 10 µA Forward voltage IF = 2 mA VF - 0.85 1 V Diode capacitance VR = 0 , f = 1 MHz C T - 0.35 0.6 pF Differential forward resistance IF = 5 mA, f = 100 MHz R F OHM

Semiconductor Group 3 Feb-01-1996 BAT 63-099R Forward current IF = f (VF) V F -2 10 -1 10 0 10 1 10 2 10 mA IF TA = 25°C TA = 85°C TA = 125°C Diode capacitance C T = f (VR ) f = 1MHz 0 5 10 15 20 V 30 V R 0.0 0.1 0.2 0.3 pF 0.5 C T Leakage current IR = f (VR ) TA = Parameter 0 5 10 15 20 25 30 V 40 V R -1 10 0 10 1 10 2 10 3 10 uA IR TA = 25°C TA = 85°C TA = 125°C

Semiconductor Group 4 Feb-01-1996 BAT 63-099R Package