BAT62 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Silicon Schottky Diode BAT 62
- Low barrier diode for detectors up to GHz frequencies. ESD :Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings per Diode Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration SOT-143BAT 62 Q62702-A97162 Thermal Resistance Junction - ambient2) Rth JA ≤ 810 K/W Junction - soldering point Rth JS ≤ 650 Parameter Symbol Values Unit Reverse voltage VR 40 V Forward current IF 20 mA Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Total power dissipation,TS ≤ 85 ˚C Ptot 100 mW 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm× 0.7 mm. 02.96
Electrical Characteristics per Diode atTA = 25 ˚C, unless otherwise specified. Parameter Symbol min. typ. UnitValues max. Forward voltage IF = 2 mA VF V– 0.58 1 Diode capacitance VR = 0,f= 1 MHz C T pF– 0.35 0.6 Case capacitance C C – 0.1 – Differential resistance VR = 0,f= 10 kHz R0 kΩ– 225 – Series inductance LS nH–2– Reverse current VR = 40 V IR µA––1 0 Forward currentIF =f (V F) Forward currentIF =f (TS; TA *) *Package mounted on alumina
Reverse currentIR =f (V R ) f = 1 MHz Rectifier voltageV 0 =f (V i) f = 900 MHz Diode capacitanceC T =f (V R ) f = 1 MHz