BAT62-07W SIEMENS | Alldatasheet

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Semiconductor Group Sep-07-19981 Silicon Schottky Diode

  • Low barrier diode for detectors up to GHz frequencies VPS05605 ESD : Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code PackagePin Configuration 4=A1Q62702-A1198BAT 62-07W 1=C1 2=C2 3=A2 SOT-34362s Maximum Ratings Parameter Symbol UnitValue VR 40Diode reverse voltage V 20 mAIFForward current Total power dissipation, TS = 103 °C Ptot 100 mW 150 °CTjJunction temperature Storage temperature Tstg -55 ...+150 Thermal Resistance K/WR thJA £ 630Junction - ambient 1) Junction - soldering point R thJS £ 470 Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-07-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues typ. max.min. DC characteristics 10 µA--IRReverse current VR = 40 V VF - 0.58 1 VForward voltage IF = 2 mA AC characteristics pFC TDiode capacitance VR = 0 V, f = 1 MHz - 0.60.35 - 0.1Case capacitance f = 1 MHz -C C 225 - kW-R 0Differential resistance VR = 0 , f = 10 kHz 2Series inductance chip to ground Ls - nH- Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-07-19983 Forward current IF = f (TA*;TS) * mounted on alumina 0 20 40 60 80 100 120 °C 150 TA,TS mA IF TS TA Forward current IF = f (VF) TA = parameter VF 1 10 2 10 3 10 4 10 uA IF TA = 25°C TA = 85°C TA = 125°C TA = -40°C Permissiple pulse load IFmax /IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-07-19984 Diode capacitance C T = f (V R) f = 1MHz 0 5 10 15 20 V 30 VR 0.0 0.1 0.2 0.3 0.4 pF 0.6 C T Reverse current IR = f (VR ) TA = Parameter 0 5 10 15 20 25 30 V 40 VR -1 10 0 10 1 10 2 10 3 10 uA IR TA = 25°C TA = 85°C TA = 125°C Rectifier voltage Vout = f (Vin) f = 900 MHz R L = parameter in kW 10 0 10 1 10 2 10 3 10 4 mV VI -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mV VO 1000 500 200 100 R L=10 Testcircuit D.U.T R IN R LC L 1nF50W V I V 0 Semiconductor Group 4 1998-11-01