BAT62-03W SIEMENS | Alldatasheet

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Semiconductor Group 1 Mar-07-1996 BAT 62-03W Silicon Schottky Diode

  • Low Barrier diode for detectors up to GHz frequencies ESD : ElectroStatic D ischarge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 62-03W L Q62702-A1028 1 = A 2 = C SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 40 V Forward current IF 40 mA Junction temperature Tj 150 °C Storage temperature Tstg - 55 ... + 150 Total power dissipation TS ≤ 85°C Ptot 100 mW Thermal Resistance Junction ambient 1) R thJA ≤ 650 K/W Junction - soldering point R thJS ≤ 810 1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm

Semiconductor Group 2 Mar-07-1996 BAT 62-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 40 V, TA = 25 °C IR - - 10 µA Forward voltage IF = 2 mA VF - 0.58 1 V AC Characteristics Diode capacitance VR = 0 , f = 1 MHz C T - 0.35 0.6 pF Case capacitance f = 1 MHz C C - 0.1 - Differential resistance VR = 0 , f = 10 kHz R 0 - 225 - kΩ Series inductance chip to ground Ls - 2 - nH

Semiconductor Group 3 Mar-07-1996 BAT 62-03W Forward current IF = f (VF) TA = parameter V F 1 10 2 10 3 10 4 10 uA IF TA = 25°C TA = 85°C TA = 125°C TA = -40°C Leakage current IR = f (VR ) TA = Parameter 0 5 10 15 20 25 30 V 40 V R -1 10 0 10 1 10 2 10 3 10 uA IR TA = 25°C TA = 85°C TA = 125°C Diode capacitance C T = f (VR ) f = 1MHz 0 5 10 15 20 V 30 V R 0.0 0.1 0.2 0.3 pF 0.5 C T Rectifier voltage V0 = f (Vi) f = 900MHz R L = parameter in Ω mV V E -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mV V A R L=5k R L=20k R L=100k R L=200k R L=1M

Semiconductor Group 4 Mar-07-1996 BAT 62-03W Package