BAT62-02W SIEMENS | Alldatasheet

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Semiconductor Group Jul-02-19981 Silicon Schottky Diode

  • Low barrier diode for detectors up to GHz frequencies

1 VES05991

ESD : Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L Q62702-A1028 1 = C 2 = A SCD-80 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 40 mA Junction temperature Tj 150 °C Storage temperature Tstg -55 ...+150 Thermal Resistance Junction - ambient 1) R thJA £ 650 K/W Junction - soldering point R thJS £ 810 1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group 1 1998-11-01

Semiconductor Group Jul-02-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 40 V IR - - 10 µA Forward voltage IF = 2 mA VF - 0.58 1 V AC characteristics Diode capacitance VR = 1 V, f = 1 MHz C T - 0.35 0.6 pF Case capacitance f = 1 MHz C C - 0.09 - Differential resistance VR = 0 , f = 10 kHz R 0 - 225 - kW Series inductance chip to ground Ls - 0.6 - nH Semiconductor Group 2 1998-11-01

Semiconductor Group Jul-02-19983 Forward current IF = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS mA IF TS 0 20 40 60 80 100 120 °C 150 TA,TS mA IF TA 0 20 40 60 80 100 120 °C 150 TA,TS mA IF Permissible Pulse Load R thJS = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01

Semiconductor Group Jul-02-19984 Forward current IF = f (V F) TA = parameter VF 1 10 2 10 3 10 4 10 uA IF TA = 25°C TA = 85°C TA = 125°C TA = -40°C Leakage current IR = f (VR ) TA = Parameter 0 5 10 15 20 25 30 V 40 VR -1 10 0 10 1 10 2 10 3 10 uA IR 0 5 10 15 20 25 30 V 40 VR -1 10 0 10 1 10 2 10 3 10 uA IR TA = 25°C TA = 85°C TA = 125°C Diode capacitance C T = f (V R) f = 1MHz 0 5 10 15 20 V 30 VR 0.0 0.1 0.2 0.3 pF 0.5 C T Rectifier voltage Vout = f (Vin) f = 900 MHz R L = parameter in kW 10 0 10 1 10 2 10 3 10 4 mV VI -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mV VO 1000 500 200 100 R L=10 Semiconductor Group 4 1998-11-01