BAT62_14 INFINEON | Alldatasheet
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Technical content
BAT62... Silicon Schottky Diode
- Low barrier diode for detectors up to GHz frequencies
- Pb-free (RoHS compliant) package BAT62 BAT62-07W BAT62-02L BAT62-02LS BAT62-07L4BAT62-03W BAT62-02V BAT62-02W /G31 /G32 /G31 /G44 /G32 /G32 /G33 /G34 /G44 /G31 21 D2D1 /G31 /G44 /G32 /G32 /G33 /G34 /G44 /G31 BAT62-09S /G31 /G44 /G31 /G32 /G33 /G34 /G35 /G36 /G44 /G32 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration LS(nH) Marking BAT62-02W** BAT62 BAT62-02L BAT62-02LS* BAT62-02V BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80 SOT143 TSLP-2-1 TSSLP-2-1 SC79 SOD323 TSLP-4-4 SOT343 SOT363 single anti-parallel pair single, leadless single, leadless single single parallel pair, leadless parallel pair parallel high, high isolation 0.6 0.4 0.2 0.6 1.8 0.4 1.8 1.6 62s L U k white L 62s 69s * Preliminary Data ** Not for new design
BAT62... Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 20 mA Total power dissipation BAT62, T S ≤ 85 °C BAT62-02L, -07L4, -03W, TS ≤ 108 °C BAT62-02W, -02V, TS ≤ 109 °C BAT62-07W, TS ≤ 103 °C BAT62-09S, TS ≤ 105 °C Ptot 100 100 100 100 100 Junction temperature Tj 150 °C Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W, 02V BAT62-07W BAT62-09S RthJS ≤ 650 ≤ 420 ≤ 410 ≤ 470 ≤ tbd Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 40 V IR - - 10 µA Forward voltage IF = 2 mA VF - 0.58 1 V Forward voltage matching2) IF = 2 mA ∆ VF - - 20 mV 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2∆VF is the difference between lowest and highest VF in a multiple diode component.
BAT62... Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz CT - 0.35 0.6 pF Differential resistance VR = 0 V, f = 10 kHz R0 - 225 - kΩ
BAT62... Diode capacitance CT = ƒ (VR) f = 1MHz 00.0 EHD07062BAT 62 C VR T 10 20 30 V 40 0.2 0.4 0.6 0.8 pF 1.0 Reverse current IR = ƒ(VR) TA = Parameter 0 5 10 15 20 25 30 V 40 VR -1 10 0 10 1 10 2 10 3 10 uA IR 25°C 85°C 125°C Forward current IF = ƒ (VF) TA = Parameter VF 1 10 2 10 3 10 4 10 uA IF 25°C 85°C 125°C -40°C Forward current IF = ƒ (TS) BAT62 0 15 30 45 60 75 90 105 120 °C 150 TS mA IF
BAT62... Forward current IF = ƒ (TS) BAT62-02W, -02V 0 15 30 45 60 75 90 105 120 °C 150 TS mA IF Forward current IF = ƒ (TS) BAT62-02L, -07L4 0 15 30 45 60 75 90 105 120 °C 150 TS mA IF Forward current IF = ƒ (TS) BAT62-03W 0 15 30 45 60 75 90 105 120 °C 150 TS mA IF Forward current IF = ƒ (TS) BAT62-07W 0 15 30 45 60 75 90 105 120 °C 150 TS mA IF
BAT62... Permissible Puls Load RthJS = ƒ (tp) BAT62 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAT62 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAT62-02L, -07L4 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BAT62-02L, -07L4 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0
BAT62... Permissible Puls Load RthJS = ƒ (tp) BAT62-02W, 02V 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAT62-02W, -02V 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BAT62-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAT62-03W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
BAT62... Permissible Pulse Load IFmax/ IFDC = ƒ (tp) BAT62-07W 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax/IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BAT62-07W 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Rectifier voltage Vout = ƒ (Vin) f = 900MHz RL = Parameter in kΩ 10 0 10 1 10 2 10 3 10 4 mV VI -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mV VO 1000 500 200 100 Testcircuit D.U.T R IN R LC L 1nF50Ω V I V 0
BAT62...Package SC79
BAT62...Package SCD80 Package Outline Foot Print Marking Layout (Example) ±0.11.7 0.3 marking Cathode 0.8 ±0.1 10˚MAX. ±0.10.7 ±0.11.3 0.13 ±0.05 +0.05 -0.03 ±1.5˚
0.2 M A
A±0.050.2 0.35 0.35 1.45 BAR63-02W Type code Cathode marking Laser marking 0.7 2 0.2 0.9 0.4 1.45 2.5 Standard Reel with 2 mm Pitch Cathode marking Cathode marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel 2005, June Date code
BAT62... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code 1) New Marking Layout for SC75, implemented at October 2005. Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 201 3 2014 0 1 apAPapAPapAP 0 2 bqB Q bqB Q bqB Q 0 3 crC R crC R crC R 0 4 d sDSd sDSd sDS 0 5 e t ETe t ETe t ET 0 6 fuF U fuF U fuF U 0 7 gvG VgvG VgvG V 0 8 h xHXh xHXh xHX 0 9 jyJ Y jyJ Y jyJ Y 1 0 k zKZk zKZk zKZ 1 1 l 2L4 l 2L4 l 2L4 1 2 n3N5n3N5n3N5
BAT62...Package SOD323
BAT62...Package SOT143
BAT62...Package SOT343
BAT62...Package SOT363
BAT62...Package TSLP-2-1
BAT62...Package TSLP-4-4
BAT62...Package TSSLP-2-1
BAT62... Edition 2009-11-16 Published by Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com >). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.