BAT60B SIEMENS | Alldatasheet

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Technical content

Semiconductor Group Sep-04-19981 Silicon Schottky Diode

  • Rectifier Schottky diode for mobile communication
  • Low voltage high inductane
  • For power supply
  • For clamping and proptection in low voltage application
  • For detection and step-up-conversion VPS051761 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 60B blue/5 Q62702-A1189 1 = C 2 = A SOD-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 10 V Forward current IF 3 A Surge forward current (t< 100ms) IFSM 5 mA Total power dissipation, TS = 28 °C Ptot 1350 mW Junction temperature Tj 150 °C Storage temperature Tstg - 55 ...+150 Maximum Ratings Junction - ambient 1) RthJA £ 160 K/W Junction - soldering point RthJS £ 90 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-04-19982 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 5 V VR = 8 V µA IR Reverse current VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C IR 100 410 Forward voltage IF = 10 mA IF = 100 mA IF = 1000 mA VF 0.24 0.3 0.4 V AC characteristics C T - 20 - pFDiode capacitance VR = 5 V, f = 1 MHz Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-04-19983 Forward current IF = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 400 800 1200 1600 2000 2400 mA 3200 IF TS TA Reverse current IR = f (TA ) VR = 8V -20 0 20 40 60 80 100 120 °C 160 TA -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 A IR Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01