BAT54 PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Product specification Supersedes data of 2001 Oct 12

2002 Mar 04

Schottky barrier (double) diodes ook, halfpage M3D088

2002 Mar 04 2

Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series

FEATURES

  • Low forward voltage
  • Guard ring protected
  • Small plastic SMD package.

APPLICATIONS

  • Ultra high-speed switching
  • Voltage clamping
  • Protection circuits
  • Blocking diodes.

DESCRIPTION

Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W: Made in China. PINNING TYPE NUMBER MARKING CODE (1) BAT54 L4 ∗ BAT54A L42 or ∗V3 BAT54C L43 or ∗W1 BAT54S L44 or ∗V4 PIN BAT54 BAT54A BAT54C BAT54S 1a k 1 a1 a1 2 n.c. k 2 a2 k2 3k a 1,a2 k1,k2 k1,a2 handbook, 2 columns MGC421Top view Fig.1 Simplified outline (SOT23) and pin configuration. MLC360 MLC359 MLC358 Fig.2 Diode configuration and symbol. n.c. MLC357 (1) BAT54 (2) BAT54A (3) BAT54C (4) BAT54S

2002 Mar 04 3

Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb =2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current t p ≤ 1s ;δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp <1 0m s − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Per device Ptot total power dissipation T amb ≤ 25 °C − 230 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR reverse current V R = 25 V; see Fig.4 2 µA trr reverse recovery time when switched from I F =1 0m A to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA; see Fig.6 5n s C d diode capacitance f = 1 MHz; V R = 1 V; see Fig.5 10 pF

2002 Mar 04 4

Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series handbook, halfpage10 IF VF (V) (mA) 10 1 1.20.80.40 MSA892 (3)(2)(1) (3)(2)(1) (1) Tamb = 125°C. (2) Tamb =8 5°C. (3) Tamb =2 5°C. Fig.3 Forward current as a function of forward voltage; typical values. 01 0 2 0 3 0 V (V)R 10 3 IR (µA) 10 2 10 1 (1) (2) (3) MSA893 (1) Tamb = 125°C. (2) Tamb =8 5°C. (3) Tamb =2 5°C. Fig.4 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 01 02 03 0 VR (V) C d (pF) MSA891 Fig.5 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =2 5°C. Fig.6 Reverse recovery definitions. handbook, halfpage 90% 10% tf Q dI dt t IF IR MRC129 - 1 F r

2002 Mar 04 5

Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

2002 Mar 04 6

Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2002 Mar 04 7

Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series NOTES

© Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands 613514/04/pp8 Date of release:2002 Mar 04 Document order number: 9397 750 09408