BAT42W GE | Alldatasheet
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Technical content
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Case: SOD-123 Plastic Case Weight: approx. 0.01 g Dimensions in inches and (millimeters) SOD-123 .022 (0.55) max. .004 (0.1) .112 (2.85) .152 (3.85) .067 (1.70) max. .053 (1.35) min. .010 (0.25) Cathode Mark max. .006 (0.15) T op View .140 (3.55) .100 (2.55) .055 (1.40) BAT42W, BAT43W Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 30 V Forward Continuous Current at Tamb = 25 °C I F 200 mA Repetitive Peak Forward Current at tp < 1 s, δ < 0.5, Tamb = 25 °C IFRM 500 mA Surge Forward Current at tp < 10 ms, Tamb = 25 °C I FSM 4 2) A Power Dissipation1) at Tamb = 65 °C P tot 200 2) mW Junction T emperature T j 125 °C Ambient Operating Temperature Range T amb –55 to +125 °C Storage Temperature Range T S –55 to +150 °C 2) Valid provided that electrodes are kept at ambient temperature For general purpose applications These diodes feature very low turn- on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. These diodes are also available in the DO-35 case with the type designations BA T42 to BA T43 and in the MiniMELF case with type designations LL42 to LL43.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BAT42W, BAT43W Symbol Min. T yp. Max. Unit Reverse Breakdown Voltage tested with 100 µA Pulses V(BR)R 3 0 ––V Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 200 mA at IF = 10 mA BAT42W at IF = 50 mA BAT42W at IF = 2 mA BAT43W at IF = 15mA BAT43W VF VF VF VF VF 0.26 0.4 0.65 0.33 0.45 V V V V V Leakage Current Pulse Test t p < 300 µs, δ < 2% at VR = 25 V at VR = 25 V , Tj = 100 °C IR IR 0.5 100 µA µA Capacitance at VR = 1 V , f = 1 MHz C tot –7–p F Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, R L = 100 Ω trr ––5n s Detection Efficiency at RL = 15 KΩ , CL = 300 pF , f = 45 MHz, VRF = 2 V ηv 8 0 ––% Thermal Resistance Junction to Ambient Air RthJA ––0 . 3 2) K/mW 2) Valid provided that electrodes are kept at ambient temperature