BAT41 KISEMICONDUCTOR | Alldatasheet
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Technical content
BAT 41SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex- cessive voltage such as electrostatic discharges. DO 35 (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 100 V IF Forward Continuous Current* Ta = 25 °C 100 mA IFRM Repetitive Peak Forward Current* t p ≤ 1s δ ≤ 0.5 350 mA IFSM Surge non Repetitive Forward Current* tp ≤ 10ms 750 mA Ptot Power Dissipation* Ta = 95°C 100 mW Tstg Tj Storage and Junction T emperature Range - 65 to +150 - 65 to +125 TL Maximum Lead T emperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 300 °C/W THERMAL RESISTANCE * On infinite heatsink with 4mm lead length * * Pulse test: tp ≤ 300µs δ < 2% . Symbol Test Conditions Min. Typ. Max. Unit VBR Tj = 25°CI R = 100µA 100 V VF * * Tj = 25°CI F = 1mA 0.4 0.45 V Tj = 25°CI F = 200mA 1 IR * * Tj = 25°C VR = 50V 0.1 µA Tj = 100°C 20 STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit C Tj = 25°CV R = 1V f = 1MHz 2p F DYNAMIC CHARACTERISTICS KI SEMICONDUCTOR.CO
Figure 5. Capacitance C versus reverse applied voltage VR (typical values).
Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g PACKAGE MECHANICAL DATA DO 35 Glass note 2 BA B C note 1note 1 D D O/ O/ E E REF . DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 12.7 0.500 D 0.458 0.558 0.018 0.022 BAT 41