BAT41 GE | Alldatasheet
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Technical content
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified max. .150 (3.8) max.∅ Cathode .020 (0.52) Mark max. ∅ .079 (2.0) Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g BAT41 Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 100 V Forward Continuous Current at Tamb = 25 °C I F 1001) mA Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C IFRM 3501) mA Surge Forward Current at tp = 10 ms, Tamb = 25 °C ISFM 7501) mA Power Dissipation, Tamb = 25 °C P tot 4001) mW Junction T emperature T j 125 °C Ambient Operating Temperature Range T amb –65 to +125 °C Storage T emperature Range T S –65 to +150 °C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature. For general purpose applications This diode featutres low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electro- static discharges. This diode is also available in a MiniMELF case with type designation LL41.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BAT41 T est Conditions Symbol Min. T yp. Max. Unit Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses V(BR)R 100 110 – V Forward Voltage Pulse Test tp = 300 µs at IF = 1 mA at IF = 200 mA VF VF 0.40 0.45 1.0 V V Leakage Current Pulse Test tp = 300 µs at VR = 50 V , at Tj = 25 °C at VR = 50 V , at Tj = 100 °C IR IR 100 nA µA Capacitance at VR = 1 V , f = 1 MHz C tot –2–p F Reverse Recovery Time from IF = 10 mA, to IR = 10 mA to IR = 1 mA RL = 100 Ohm trr –5–n s Thermal Resistance Junction to Ambient Air R thJA – – 300 1) K/W 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.