BAT32 SIEMENS | Alldatasheet
Document overview
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Technical content
Silicon Schottky Diode BAT 32 l RF detector l Low-power mixer l Zero bias l Very low capacitance l For frequencies up to 18 GHz l HiRel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! Maximum Ratings Type Ordering Code (tape and reel) Frequency band (GHz) Package 1)Pin Configuration BAT 32 Q62702-A826… 18 (X, Ku) Cerec-X Marking Parameter Symbol Values Unit Forward current IF 50 mA Junction temperature Tj 150 Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 Reverse voltage VR 6.5 V 1) For detailed information see chapter Package Outlines.
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Forward voltage IF = 1 mA IF = 10 mA VF 0.2 0.6 Diode capacitance VR = 0.15 V,f= 1 MHz C T pF– 0.20 0.24 Parameter Symbol min. typ. UnitValues max. Differential resistance VF = 0,f= 10 kHz Ro kW–1 5 – Breakdown voltage IR = 1 mA V(BR) V6.5 – – Forward currentIF =f (V F)