BAT30 SIEMENS | Alldatasheet
Document overview
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Technical content
Silicon Schottky Diode BAT 30 @ RF detector @ Low-power mixer 2 @ Zero bias @ Very low capacitance @ For frequencies up to 25 GHz : Se vecesz09 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency Ordering Code | Pin Configuration Package’) band (GHz) BAT 30 Q62702-A764 | Pointed anode $1 1 2 ° ka ‘Cmso7008 Maximum Ratings Forward carent a Operating temperature range —55 ... + 150 ‘) For detailed information see chapter Package Outlines, Samicanductar Groun 4 07.94
Electrical Characteristics
at Ts = 25 °C, unless otherwise specified. Breakdown voltage Vier) 6.5 v ia=1mA Forward voltage Ve iF= 1mA 0.2 le=10mA 0.6 Diode capacitance Cr pF Va= 0.15 V, f= 1 MHz Differential resistance 15 kQ Ve = 0, f= 10 kHz Forward current Jr = (Vr) 10? B® 7 —— =———: = a == fo mEPP Eee 4 acs oe a ese | i LLL eer} ATT 10° — _f Litt) = SS —+ ====== me SEEREEEEE i ; ==== = Fi tT a EEE Prt oo 0.0 05 vy 10 —. i, Caminandiuntar Cenin L}