BAT240A SIEMENS | Alldatasheet
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Technical content
Semiconductor Group Sep-09-19981 Silicon Schottky Diode Preliminary data
- Rectifier Schottky diode for modem applications
- High reverse voltage
- For power supply
- For clamping and protection in all high voltage applications VPS05161 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 240A 4Ms Q62702-A1234 1=C1/A2 2 = C2 SOT-233 = A1 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 240 V Peak reverse voltage VRM V250 Forward current IF 400 mA Surge forward current (t £ 10ms) IFSM 1 A Total power dissipation, TS = 28 °C Ptot 400 mW Junction temperature Tj 80 °C Storage temperature Tstg - 55 ...+150 Maximum Ratings Junction - ambient 1) RthJA £ 465 K/W Junction - soldering point RthJS £ 305 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 1998-11-01
Semiconductor Group Sep-09-19982 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol UnitValues typ. max.min. DC characteristics Breakdown voltage I(BR) = 500 µA V(BR) 240 - V- Reverse current VR = 200 V VR = 240 IR µA Forward voltage IF = 10 mA IF = 20 mA IF = 50 mA VF 0.325 0.37 0.47 V AC characteristics Diode capacitance VR = 10 V, f = 1 MHz C T - 11.5 - pF Semiconductor Group 2 1998-11-01
Semiconductor Group Sep-09-19983 Forward current IF = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 100 150 200 250 300 350 400 mA 500 IF TS TA Permissible Pulse Load R thJS = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01