DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Single silicon Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring-on chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz. Feature list

  • Low inductance LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz
  • TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print
  • Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in:
  • Mobile devices
  • Radar systems and modules Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT24-02ELS / BAT2402ELSE6327XTSA1 TSSLP-2-3 Single, leadless S underscore 15 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-06-30

1 Absolute maximum ratings

Table 2 Absolute maximum ratings at T A= 25°C, unless otherwise specified Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage VR – 4 V Forward current IF – 110 mA Total power dissipation PTOT – 100 mW TS ≤ 82°C 1) Junction temperature TJ – 150 °C Operating temperature TOP -55 150 Storage temperature TSTG -55 150 Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 TS is the soldering point temperature. BAT24-02ELS Single silicon Schottky diode Table of contents Datasheet 2 v2.0 2018-06-30

2 Electrical performance in test fixture

2.1 Electrical characteristics

Table 3 Electrical characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Breakdown voltage VBR 4 – – V IR = 10 μA Reverse current IR – – 5 μA VR = 1 V Forward voltage VR 0.16 0.25 0.32 V IF = 1 mA 0.25 0.35 0.41 IF = 10 mA Differential forward resistance RF – 8 10 Ω IF = 10 mA / 50 mA 1) Capacitance C – 0.2 0.23 pF VR = 0 V, f = 1 MHz Inductance LS – 0.2 – nH

2.2 Characteristic curves

At TA = 25 °C, unless otherwise specified 0 0.5 1 1.5 2 2.5 3 3.5 4 VR [V] 0.12 0.14 0.16 0.18 0.2 0.22 0.24C [pF] Figure 1 Capacitance C vs. reverse voltage VR at frequency f = 1 MHz RF = VF 50 mA −VF 10 mA 50 mA − 10 mA BAT24-02ELS Single silicon Schottky diode Electrical performance in test fixture Datasheet 3 v2.0 2018-06-30

3 Thermal characteristics

Table 4 Thermal resistance Parameter Sym bol Values Unit Note or test condition Min. Typ. Max. Thermal resistance (junction - soldering point) RthJS – 675 – K/W TS = 82 °C 1) 0 20 40 60 80 100 120 140 160 TS [°C] 100 120 IF [mA] Figure 8 Permissible forward current IF in DC operation 1 For RthJS in other conditions refer to the curves in this chapter. BAT24-02ELS Single silicon Schottky diode Thermal characteristics Datasheet 7 v2.0 2018-06-30

4 Package information TSSLP-2-3

Figure 13 Marking layout example ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ] 0.73 0.43 0.35INDEX MARKINGPIN 1 Figure 14 Tape dimensions Note: See our Recommendations for Printed Circuit Board Assembly of TSLP /TSSLP /TSNP Packages . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. BAT24-02ELS Single silicon Schottky diode Package information TSSLP-2-3 Datasheet 9 v2.0 2018-06-30

5 References

[1] Infineon AG - Recommendations for Printed Circuit Board Assembly of Infineon TSLP /TSSLP /TSNP Packages

Revision history

2.0 2018-09-07 • New layout of datasheet

  • Typical values and curves updated to the values of the production (No product or process change behind) BAT24-02ELS Single silicon Schottky diode References Datasheet 10 v2.0 2018-06-30

All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-06-30 Published by Infineon Technologies AG

81726 Munich, Germany

© 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-qrj1529429594517 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury