BAT15-D SIEMENS | Alldatasheet
Document overview
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Technical content
Silicon Schottky Diodes BAT 15- … D ESD: Electrostatic discharge sensitive device, observe handling precautions! Maximum Ratings Type Ordering CodeMarking Package 1)Pin Configuration BAT 15-020 D Q62702-D1263–D BAT 15-050 D Q62702-D3450 BAT 15-090 D Q62702-D1280 BAT 15-110 D Q62702-D1289 Parameter Symbol Unit Reverse voltage VR 4V Junction temperature Tj 175 ˚C Tstg – 65 … + 150 Forward current IF 100 mA Storage temperature range Operating temperature range Top – 65 … + 150 Values BAT 15-020 D BAT 15-050 D BAT 15-090 D BAT 15-110 D 1) For detailed information see chapter Package Outlines. l Beam lead technology l Low dimension l High performance l Low barrier
BAT 15- … D BAT 15- ... D
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. VBreakdown voltage IR = 10mA V(BR) 4–– pFDiode capacitance VR = 0,f = 1 MHz BAT 15-020 D BAT 15-050 D BAT 15-090 D BAT 15-110 D C T 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 VForward voltage IF = 1 mA BAT 15-020 D BAT 15-050 D BAT 15-090 D BAT 15-110 D I F = 10 mA BAT 15-020 D BAT 15-050 D BAT 15-090 D BAT 15-110 D V F 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 dBSingle sideband noise figure F IF = 1.5 dB,PLO = 0 dBm,fIF = 10.7 MHz f = 3.0 GHz BAT 15-020 D f = 6.0 GHz BAT 15-050 D f = 9.3 GHz BAT 15-090 D f = 16 GHz BAT 15-110 D FSSB 6.0 6.5 6.5 7.0 WDifferential forward resistance IF = 10 mA BAT 15-020 D BAT 15-050 D IF = 50 mA BAT 15-090 D BAT 15-110 D rf 3.5 4.0 7.0 10.0 DC Characteristics