BAT15-04 SIEMENS | Alldatasheet
Document overview
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Technical content
Type Ordering Code Pin Configuration Marking Package (tape and reel) 1 2 3 BAT 15-04 Q62702-A504 A – C S8 SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 4V Forward current IF 110 mA Total power dissipationTS £ 55 °C Ptot 100 mW Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C Thermal Resistance Junction-ambient1) Rth JA £ 1090 K/W Junction-soldering point Rth JS £ 930 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Silicon Dual Schottky Diode BAT 15-04 l DBS mixer applications to 12 GHz l Low noise figure l Low barrier type Semiconductor Group 1 10 94
Electrical Characteristics
atTA = 25°C, unless otherwise specified. Package Outline Parameter Symbol Value Unit min. typ. max. DC Characteristics Breakdown voltage IR =5 mA V(BR) 4–– V Forward voltage IF =1m A IF =1 0m A VF 0.23 0.32 V Forward voltage matching IF =1 0m A DVF ––2 0 mV Diode capacitance VR =0V ,f= 1 MHz C T – – 0.35 pF Forward resistance IF =1 0m A/5 0m A RF – 5.5 – W SOT-23
Forward currentIF = f(VF) Diode capacitanceC T = f(VR ) f= 1 MHz Reverse current IR = f(VR )