BAT15-03W SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 Mar-19-1996 BAT 15-03W Silicon Schottky Diode
- DBS mixer applications to 12 GHz
- Low noise figure
- Low barrier type ESD : ElectroStatic D ischarge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 15-03W P/white Q62702- 1 = A 2 = C SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 4 V Forward current IF 100 mA Total power dissipation TS = 70°C Ptot 100 mW Operating temperature range Top - 55 ... + 150 °C Storage temperature Tstg - 55 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 770 K/W Junction - soldering point R thJS ≤ 690 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Q62702-A1104
Semiconductor Group 2 Mar-19-1996 BAT 15-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage I(BR) = 5 µA V(BR) 4 - - V Forward voltage IF = 1 mA IF = 10 mA VF 0.32 0.23 0.41 0.32 AC characteristics Diode capacitance VR = 0 , f = 1 MHz C T - - 0.35 pF Differential forward resistance IF 10mA/ 50 mA R F - 5.5 - Ω
Semiconductor Group 3 Mar-19-1996 BAT 15-03W Forward Current IF = f(VF) Reverse current IR = f (TA) Diode capacitance C T = f (VR ) f = 1MHz
Semiconductor Group 4 Mar-19-1996 BAT 15-03W Package