BAT14-099R SIEMENS | Alldatasheet
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Silicon Crossover Ring Quad Schottky Diode BAT 14-099R
- Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Maximum Ratings per Diode Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAT 14-099R Q62702-A0042S8 SOT-143 Parameter Symbol Values Unit Forward current IF 90 mA Power dissipation,TS ≤ 70 ˚C Ptot 100 mW Storage temperature range Tstg – 55 … + 150 ˚C Operating temperature range Top – 55 … + 150 Thermal Resistance per Diode Junction – ambient2) Rth JA ≤ 1020 K/W Junction – soldering point Rth JS ≤ 780 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm to 0.7 mm. 02.96
Electrical Characteristics per Diode atTA = 25 ˚C, unless otherwise specified. Forward voltage matching1) IF = 10 mA ΔVF mV––2 0 Forward voltage IF = 1 mA IF = 10 mA VF V 0.4 0.48 Diode capacitance V R = 0,f= 1 MHz C T pF– 0.38 – Parameter Symbol min. typ. UnitValues max. Forward resistance IF = 10 mA / 50 mA RF Ω– 5.5 – Forward currentIF =f (V F) Forward currentIF =f (TS;TA *) *Package mounted on alumina 1) ΔVF is the difference between the lowest and the highestVF in the component.