BAT14 SIEMENS | Alldatasheet

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Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer

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¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions! (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702D1346 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702D1345 (see Chapter Order Instructions for ordering example) Type Marking Ordering Code Pin Configuration Package BAT 14-013 (ql) see below T BAT 14-014 (ql) see below see BAT14-013 T1 BAT 14-033 (ql) BAT 14-034 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-043 (ql) BAT 14-044 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-063 (ql) BAT 14-064 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-073 (ql) BAT 14-074 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-093 (ql) BAT 14-094 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-103 (ql) BAT 14-104 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-113 (ql) BAT 14-114 (ql) see below see below see BAT14-013 see BAT14-013 T BAT 14-123 (ql) BAT 14-124 (ql) see below see below see BAT14-013 see BAT14-013 T

Semiconductor Group 2 Draft A03 1998-04-01 Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General criterion for burn-out energy is a 3 dB increase in noise figure. Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Reverse voltage V R Forward current BAT14-123, -124 I F 100 100 mA Power dissipation BAT14-123, -124 P tot 100 100 mW Operating temperature range T op 55 to + 150 C Storage temperature range T stg 65 to + 175 C Soldering temperature T sol + 220 C Burn-out energy BAT14-123, -124 E B 5.0 5.0 2.0 2.0 1.0 Erg

Semiconductor Group 3 Draft A03 1998-04-01

Electrical Characteristics

Table 2 DC Characteristics at T A = 25 C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Breakdown voltage I R = 10 m A V (BR) V Reverse current V R = 2 V I R m A Forward voltage 1 I = 0.01 mA BAT14-123, -124 V 0.31 0.32 0.33 0.35 0.36 V Forward voltage 2 I = 1 mA BAT14-123, -124 V 0.42 0.44 0.45 0.46 0.48 0.44 0.45 0.46 0.48 0.50 V Series resistance I = 10 mA, I = 50 mA BAT14-013, -014 BAT14-033, -034 BAT14-043, -044 BAT14-063, -064 BAT14-073, -074 BAT14-093, -094 BAT14-103, -104 BAT14-113, -114 BAT14-123, -124 R F 3.0 4.0 3.5 4.5 4.5 5.5 6.0 7.0 8.0 3.5 4.5 4.0 5.0 5.5 6.5 7.0 8.0 9.0 W RF DVF 40 10 3д

Semiconductor Group 4 Draft A03 1998-04-01 Table 3 AC Characteristics at T A = 25 C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Total capacitance V R = 0 V, f = 1 MHz BAT14-123, -124 C T 0.35 0.30 0.27 0.23 0.20 0.60 0.35 0.30 0.25 0.22 pF Noise figure I.F. = 30 MHz LO power = 0 dBm LO = 9.375 GHz BAT14-013, -014 BAT14-033, -034 BAT14-043, -044 BAT14-063, -064 BAT14-073, -074 BAT14-093, -094 BAT14-103, -104 BAT14-113, -114 BAT14-123, -124 NF 5.3 6.3 5.3 6.3 5.3 6.3 5.7 7.2 8.0 5.5 6.5 5.5 6.5 5.5 6.5 6.0 7.5 9.0 dB

Semiconductor Group 5 Draft A03 1998-04-01 Order Instructions Full type variant including type variant and quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: QÉ BAT14- (x) (ql) (x): Type Variant (ql): Quality Level Ordering Example: Ordering Code: Q62702D1345 BAT14-014 ES For BAT14-014 in T1 Package; ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de

Semiconductor Group 6 Draft A03 1998-04-01 Figure 1 T Package Symbol Millimetre min. max. A 1.30 1.45 B 1.15 1.35 C - 0.4

Semiconductor Group 7 Draft A03 1998-04-01 Figure 2 T1 Package Symbol Millimetre min. max. A 1.30 1.45 B 1.15 1.35 C - 0.40 D 0.10 0.50 E - 0.30 F 0.06 0.10 G 5.50 - H 0.40 0.60