BAT14-03W SIEMENS | Alldatasheet

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Technical content

Semiconductor Group 1 Mar-01-1996 BAT 14-03W Silicon Schottky Diode

  • DBS mixer application to 12GHz
  • Medium barrier type
  • Low capacitance ESD : ElectroStatic D ischarge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 14-03W O/white Q62702-A1103 1 = A 2 = C SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 4 V Forward current IF 90 mA Operating temperature range Top - 55 ... + 125°C Storage temperature Tstg - 55 ... + 150 Total power dissipation TS ≤ 85°C Ptot 100 mW Thermal Resistance Junction ambient 1) R thJA ≤ 450 K/W Junction - soldering point R thJS ≤ 690 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 2 Mar-01-1996 BAT 14-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage I(BR) = 5 µA V(BR) 4 - - V Forward voltage IF = 1 mA IF = 10 mA VF 0.48 0.36 0.55 0.43 0.66 0.52 Diode capacitance VR = 0 , f = 1 MHz C T - 0.22 0.35 pF Differential forward resistance IF 10mA/ 50 mA R F - 5.5 - Ω Diode capacitance C T = f (VR ) f = 1MHz V R 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 pF 0.50 C T

Semiconductor Group 3 Mar-01-1996 BAT 14-03W Forward current IF = f (VF) V F -2 10 -1 10 0 10 1 10 2 10 mA IF 125°C 85°C 25°C -40°C Reverse current IR = f (VR ) V R -3 10 -2 10 -1 10 0 10 1 10 mA IR TA=125°C TA=85°C TA=25°C

Semiconductor Group 4 Mar-01-1996 BAT 14-03W Package