BAT14 INFINEON | Alldatasheet

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BAT14... Silicon Schottky Diode /G01 DBS mixer applications up to 12 GHz /G01 Low noise figure /G01 Low barrier type BAT14-03W /G31 /G32 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Configuration LS(nH) Marking BAT14-03W SOD323 single 1.8 O/white Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 4 V Forward current IF 90 mA Total power dissipation TS /G01 85 °C Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS /G01 690 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BAT14... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I (BR) = 10 µA V(BR) 4 - - V Forward voltage I F = 1 mA IF = 10 mA VF 0.36 0.48 0.43 0.55 0.52 0.66 AC Characteristics Diode capacitance VR = 0 , f = 1 MHz CT - 0.22 0.35 pF Differential forward resistance IF = 10mA / 50mA RF - 5.5 - /G01

BAT14... Diode capacitance CT = /G02/G03 (VR) f = 1MHz 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VF 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 pF 0.5 CT Reverse current IR = /G02 (VR) TA = Parameter VR -3 10 -2 10 -1 10 0 10 1 10 µA IR TA =125°C TA =85°C TA =25°C Forward current IF = /G02 (VF) VF -2 10 -1 10 0 10 1 10 2 10 mA IF -40°C 25°C 85°C 125°C