BAT114-099 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • High barrier diode for balanced mixers, phase detectors and modulators

(per diode) Parameter Symbol Limit Values Unit Junction to soldering point RthJS ≤ 780 K/W Junction to ambient1) RthJA ≤ 1020 K/W 1) Mounted on alumina 15 mm× 16.7 mm to 0.7 mm

Electrical Characteristics

(per diode;TA = 25°C) Parameter Symbol Limit Values Unit min. typ. max. Breakdown voltage IR = 5µA VBR 4 −− V Forward voltage IF = 1 mA IF = 10 mA VF 0.6 0.7 0.7 0.8 V Forward voltage matching1) IF = 10 mA ΔVF −− 10 mV Diode capacitance VR = 0 V,f = 1 MHz C T − 0.25 0.5 pF Forward resistance IF = 10 mA / 50 mA RF − 5.5 − Ω 1) ΔVF is difference between lowest and highestVF in component.

Forward CurrentIF =f(V F)