BAS85 GE | Alldatasheet
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Technical content
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g Dimensions in inches and (millimeters) MiniMELF .142 (3.6) .019 (0.48) Cathode Mark .063 (1.6) .134 (3.4) .055 (1.4) .011 (0.28) BAS85 Symbol Value Unit Continuous Reverse Voltage V R 30 V Forward Continuous Current at Tamb = 25 °C I F 2001) mA Peak Forward Current at Tamb = 25 °C I FM 3001) mA Surge Forward Current at tp < 1 s, Tamb = 25 °C IFSM 6001) mA Power Dissipation at Tamb = 65 °C P tot 2001) mW Junction T emperature T j 125 °C Storage T emperature Range T S –55 to +150 °C 1) Valid provided that electrodes are kept at ambient temperature. For general purpose applications This diode features low turn-on voltage. The devices are protected by a PN junc- tion guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in a DO-35 case with type designation BA T85.
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BAS85 Symbol Min. T yp. Max. Unit Reverse Breakdown Voltage tested with 10 µA Pulses V(BR)R 3 0 ––V Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at IF = 1 mA at IF = 10 mA at IF = 30 mA at IF = 100 mA VF VF VF VF VF 0.5 0.24 0.32 0.4 0.8 V V V V V Leakage Current at V R = 25 V IR –0 . 2 2 µA Capacitance at VR = 1 V , f = 1 MHz C tot ––1 0 p F Thermal Resistance Junction to Ambient Air R thJA – – 430 1) K/W Reverse Recovery Time from IF = 10 mA to IR = 10 mA to IR = 1 mA trr ––5n s 1) Valid provided that electrodes are kept at ambient temperature.