BAS70- SIEMENS | Alldatasheet

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Technical content

Silicon Schottky Diodes BAS 70 …

  • General-purpose diodes for high-speed switching
  • Circuit protection
  • Voltage clamping
  • High-level detecting and mixing Available with CECC quality assessment ESD :Electrostaticdischarge sensitive device, observe handling precautions! Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAS 70 Q62702-A11873s SOT-23 BAS 70-04 Q62702-A73074s BAS 70-05 Q62702-A71175s BAS 70-06 Q62702-A77476s 1) For detailed information see chapter Package Outlines. 01.97

BAS 70 …

  • General-purpose diodes for high-speed switching
  • Circuit protection
  • Voltage clamping
  • High-level detecting and mixing Available with CECC quality assessment ESD :Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings per Diode Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration SOT-143 BAS 70-07 Q62702-A84677s Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Rth JA ≤ 405 ≤ 575 K/W Junction - soldering point BAS 70 BAS 70-04 … R th JS ≤ 335 ≤ 435 Parameter Symbol Values Unit Reverse voltage VR 70 V Forward current IF 70 mA Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Ptot 250 mW Operating temperature range Top – 55 … + 150 Surge forward current,t ≤ 10 ms IFSM 100 1) For detailed information see chapter Package Outlines. 2) Max. 450 mW per package. 3) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

BAS 70 … Electrical Characteristics per Diode atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. VBreakdown voltage IR = 10µA V(BR) 70 – – µAReverse current VR = 50 V VR = 70 V IR 0.1 mVForward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF 375 705 880 410 750 1000 ΩDifferential forward resistance IF = 10 mA,f = 10 kHz rf –3 0 – pFDiode capacitance VR = 0,f = 1 MHz C T – 1.6 2 psCharge carrier life time IF = 25 mA τ – – 100 DC characteristics

BAS 70 … Forward currentIF = f (VF) Diode capacitanceC T =f (VR ) f= 1 MHz Characteristics per DiodeatTj = 25 ˚C, unless otherwise specified. Reverse currentIR = f (VR ) Differential forward resistancerf = f (IF) f= 10 kHz

BAS 70 … Forward currentIF = f(TA*;TS) * Package mounted on epoxy