BAS70 GE | Alldatasheet

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Technical content

FEATURES

Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE Ratings at 25 °C ambient temperature unless otherwise specified SOT -23 BAS70 Top V iew BAS70-04 Marking: 73 Marking: 74 Top V iew BAS70-05 BAS70-06 Marking: 75 Marking: 76 BAS70 THRU BAS70-06 Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 70 V Forward Continuous Current at Tamb = 25 °C I F 2001) mA Surge Forward Current at tp <1 s , Tamb = 25 °C I FSM 6001) mA Power Dissipation1) at Tamb = 25 °C P tot 2001) mW Junction T emperature T j 150 °C Storage T emperature Range T S –55 to +150 °C 1) Device on fiberglass substrate, see layout These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis- charges.

ELECTRICAL CHARACTERISTICS

Ratings for one diode at 25 °C ambient temperature unless otherwise specified BAS70 THRU BAS70-06 Symbol Min. T yp. Max. Unit Reverse Breakdown Voltage T ested with 10 µA Pulses V(BR)R 7 0 ––V Leakage Current Pulse Test tp < 300 µs at VR = 50 V IR – 20 100 nA Forward Voltage Pulse Test tp < 300 µs at IF = 1 mA at IF = 15 mA VF VF 410 1000 mV mV Capacitance at VR = 0 V , f = 1 MHz C tot –1 . 5 2p F Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA trr ––5n s Thermal Resistance Junction to Ambient Air RthJA – – 430 1) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)