BAS56_10 CENTRAL | Alldatasheet
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DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching applications. MARKING CODE: L51 or WL5 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 60 V Peak Repetitive Reverse Voltage V RRM 60 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Current I FRM 400 mA Peak Forward Surge Current, tp=1.0μs I FSM 4.0 A Peak Forward Surge Current, tp=1.0s I FSM 1.0 A Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR V R=60V 100 nA IR V R=60V, TA=150°C 100 μA IR V R=75V 10 μA VF I F=10mA 0.75 V VF I F=200mA 1.0 V VF I F=500mA 1.25 V CT V R=0, f=1.0MHz 2.5 pF trr I F=IR=400mA, Irr=40mA, RL=100Ω 6.0 ns Qs I F=10mA, VR=5.0V, RL=500Ω 50 pC VFR I F=400mA, tr=30ns 1.2 V VFR I F=400mA, tr=100ns 1.5 V SOT-143 CASE R7 (25-August 2010) www.centralsemi.com
DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: L51 or WL5 PIN CONFIGURATION www.centralsemi.com R7 (25-August 2010)