BAS56 CENTRAL | Alldatasheet
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CentralCentralCentralCentralCentral TM SOT-143 CASE BAS56 DUAL HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51. MAXIMUM RATINGS (TA=25 oC) SYMBOL UNITS Continuous Reverse Voltage V R 60 V Peak Repetitive Reverse Voltage V RRM 60 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Current I FRM 600 mA Forward Surge Current, tp=1 µsec. I FSM 4000 mA Forward Surge Current, tp=1 sec. I FSM 1000 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 oC Thermal Resistance Θ JA 357 oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR =60V 100 nA IR VR =60V, TA=150oC 100 µA IR VR =75V 10 µA VF IF=10mA 0.75 V VF IF=200mA 1.00 V VF IF=500mA 1.25 V C T VR =0, f=1 MHz 2.5 pF trr IF=IR =400mA, RL=100Ω , Rec. to 40mA 6.0 ns Q s IF=10mA, VR =5.0V, RL=500Ω 50 pC VFR IF=400mA, tr=30ns 1.2 V VFR IF=400mA, tr=100ns 1.5 V
LEAD CODE: 1) ANODE 1 2) ANODE 2 3) CATHODE 2 4) CATHODE 1 All dimensions in inches (mm).