BAS54 COMCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
PN Junction Guard Ring for Transient and ESD Protection Mechanical data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any Surface Mount Schottky DiodeSurface Mount Schottky Diode ANODE CATHODE CATHODE Rating Symbol Value Units Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg -55 to +150 °C Parameter Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 7.60 10.0 pF Reverse Leakage (VR = 25 V) IR — 0.50 2.0 mAdc Forward Voltage (IF = 0.1 mAdc) 0.22 0.24 (IF = 30 mAdc) 0.41 0.5 (IF = 100 mAdc) 0.52 1.0 Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) 0.29 0.32 (IF = 10 mAdc) 0.35 0.40 Forward Current (DC) I F — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc Vdc PF Electrical Characterics (TA = 25°C unless otherwise noted) (EACH DIODE) trr — 5.0 ns VF — Vdc VF Maximum Ratings (TA = 125°C unless otherwise noted) “-G” suffix designates RoHS compliant Version