BAS516 LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. S29–1/2 High-speed diode SOD523 SC-79 BAS516 ANODE CATHODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage – 85 V V R continuous reverse voltage – 75 V I F continuous forward current T s =90°C; note 1; see Fig.1 – 250 mA I FRM repetitive peak forward current – 500 mA I FSM non-repetitive peak forward currentsquare wave; T j =25°C prior to surge; see Fig.3 t =1µs– 4 A t =1 ms – 1 A t =1 s – 0.5 A P tot total power dissipation T s =90°C; note 1 – 500 mW T stg storage temperature -65 +150 °C T j junction temperature – 150 °C Note 1. Ts is the temperature at the soldering point of the cathode tab. ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL P ARAMETER CONDITIONS MAX. UNIT V F forward voltage see Fig.2 I F = 1 mA 715 mV I F = 10 mA 855 mV I F =50 mA 1 V I F = 150 mA 1.25 V I R reverse current see Fig.4 V R = 25 V 30 nA V R =75 V 1 µA V R = 25 V; T j = 150 °C 30 µA V R = 75 V; T j = 150 °C; 50 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.5 1 pF t rr reverse recovery time when switched from I F =10mA to I R = 10mA; 4n s R L = 100 Ω ; measured at I R = 1 mA; see Fig.6 V fr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.71.75 V THERMAL CHARACTERISTICS SYMBOL P ARAMETER CONDITIONS V ALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 120 K/W Note 1. Soldering point of the cathode tab.

FEATURES

  • Ultra small plastic SMD package
  • High switching speed: max. 4 ns
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 85 V
  • Repetitive peak forward current: max. 500 mA.

APPLICATIONS

  • High-speed switching in e.g. surface mounted circuits.

DESCRIPTION

The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package.

LESHAN RADIO COMPANY, LTD. S29–2/2 500 400 300 200 100 012 T S ( °C ) 300 200 100 00 50 100 150 200 V F ( V ) I F (mA) 0.6 0.4 0.2 0 100 200 T J ( °C ) I R (nA) C d (pF) 048 1 2 1 6 Fig.1 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.2 Forward current as a function of forward voltage. (1) T j = 150 °C; typical values. (2)T j =25°C; typical values. (3) T j =25°C; maximum values. I F (mA) Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents; T j =25°C prior to surge. t P ( µs ) I FSM (A) 10 2 10 -1 01 01 0 2 103 104 10 5 10 4 10 3 10 2 V R ( V ) f = 1 MHz ; T j =25°C; Fig.4 Reverse current as a function of junction temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. BAS516

LESHAN RADIO COMPANY, LTD. S29–3/2 BAS516 (1) I R = 1 mA. Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time t r = 0.35 ns. Fig.6 Reverse recovery voltage test circuit and waveforms. Input signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ ≤ 0.005. Fig.7 Forward recovery voltage test circuit and waveforms.