BAS40- SIEMENS | Alldatasheet
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Technical content
Silicon Schottky Diodes BAS 40 …
- General-purpose diodes for high-speed switching
- Circuit protection
- Voltage clamping
- High-level detecting and mixing Available with CECC quality assessment ESD :Electrostaticdischarge sensitive device, observe handling precautions! Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAS 40 Q62702-D33943s SOT-23 BAS 40-04 Q62702-D98044s BAS 40-05 Q62702-D97945s BAS 40-06 Q62702-D97846s 1) For detailed information see chapter Package Outlines. 5.91
BAS 40 …
- General-purpose diodes for high-speed switching
- Circuit protection
- Voltage clamping
- High-level detecting and mixing Available with CECC quality assessment ESD :Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings per Diode Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration SOT-143 BAS 40-07 Q62702-D131447s Thermal Resistance Junction - ambient2) BAS 40 BAS 40-04 … Rth JA ≤ 345 ≤ 515 K/W Junction - soldering point BAS 40 BAS 40-04 … R th JS ≤ 275 ≤ 375 Parameter Symbol Values Unit Reverse voltage VR 40 V Forward current IF 120 mA Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Total power dissipation BAS 40 TS ≤ 81 ˚C BAS 40-04 … TS ≤ 55 ˚C Ptot 250 mW Operating temperature range Top – 55 … + 150 Surge forward current,t ≤ 10 ms IFSM 200 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
BAS 40 … Electrical Characteristics per Diode atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. VBreakdown voltage IR = 10µA V(BR) 40 – – µAReverse current VR = 30 V VR = 40 V IR mVForward voltage IF = 1 mA IF = 10 mA IF = 40 mA VF 310 450 720 380 500 1000 ΩDifferential forward resistance IF = 10 mA,f = 10 kHz rf –1 0 – pFDiode capacitance VR = 0,f = 1 MHz C T –45 psCharge carrier life time IF = 25 mA τ – – 100 DC characteristics
BAS 40 … Forward currentIF = f (VF) Diode capacitanceC T =f (VR ) f= 1 MHz Characteristics per Diode atTj = 25 ˚C, unless otherwise specified. Reverse currentIR = f (VR ) Differential forward resistancerf = f (IF) f= 10 kHz
BAS 40 … Forward currentIF = f(TA*;TS) * Package mounted on epoxy