BAS35

BAS29 SKTECHNOLGY | Alldatasheet

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Technical content

Silicon Epitaxial Planar Switching Diodes BAS29 BAS31 BAS35 3 3 3 1 2 1 2 1 2 BAS29 Marking Code: L20 BAS31 Marking Code: L21 BAS35 Marking Code: L22 SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 120 V Maximum Average Forward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 600 mA Non-Repetitive Peak Forward Su rge Current t = 1 µs t = 1 s IFSM 2 1 A Power Dissipation Ptot 350 mW Junction Temperature Tj 150 OC Storage Temperature Range Tstg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA at IF = 200 mA at IF = 400 mA VF VF VF VF VF 750 840 900 1.25 mV mV mV V V Reverse Current at VR = 90 V at VR = 90 V, TJ = 150 OC IR IR 100 100 nA µA Reverse Breakdown Voltag e at IR = 1 mA V(BR)R 120 - V Total Capacitance at VR = 0 V, f = 1 MHz CT - 35 pF Reverse Recov ery Time at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr - 50 ns BAS29 BAS31 BAS35 1 of 3REV.08

2 of 3REV.08 BAS29 BAS31 BAS35

P ACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3REV.08 BAS29 BAS31 BAS35