BAS29 NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Supersedes data of 2001 Oct 10

2003 Mar 20

BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes dbook, halfpage M3D088

2003 Mar 20 2

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35

FEATURES

  • Small plastic SMD package
  • Switching speed: max. 50 ns
  • General application
  • Continuous reverse voltage: max. 90 V
  • Repetitive peak reverse voltage: max. 110 V
  • Repetitive peak forward current: max. 600 mA
  • Repetitive peak reverse current: max. 600 mA.

APPLICATIONS

  • General purpose switching in e.g. surface mounted circuits.

DESCRIPTION

General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. PINNING TYPE NUMBER MARKING CODE(1) BAS29 L20 or ∗A8 BAS31 L21 or ∗V1 BAS35 L22 or ∗V2 PIN 1 anode anode cathode (k1) 2 not connected cathode cathode (k2) 3 cathode common connection common anode handbook, halfpage21 a. Simplified outline. c. BAS31 diode. b. BAS29 diode. d. BAS35 diode. MAM233 n.c. Fig.1 Simplified outline (SOT23) and symbols.

2003 Mar 20 3

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 110 V VR continuous reverse voltage − 90 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 250 mA double diode loaded; see Fig.2; note 1 − 150 mA IFRM repetitive peak forward current − 600 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 10 A t = 100 µs − 4 A t = 1 s − 0.75 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW IRRM repetitive peak reverse current − 600 mA ERRM repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C − 5 mJ Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

2003 Mar 20 4

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF forward voltage see Fig.3 IF = 10 mA − 750 mV IF = 50 mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1 V IF = 400 mA − 1.25 V IR reverse current see Fig.5 VR = 90 V − 100 nA VR = 90 V; Tj = 150 °C − 100 µA V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 35 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 − 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 360 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W

2003 Mar 20 5

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. handbook, halfpage 0 100 (1) (2) 200 300 200 100 MBG440 Tamb (oC) IF (mA) Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 600 200 400 MBH280 IF (mA) VF (V) (1) (2) (3) (1) T j = 150 °C; typical values. (2) T j = 25 °C; typical values. (3) T j = 25 °C; maximum values. handbook, full pagewidth MBH327 10 tp (µs)1 IFSM (A) 102 10−1 104102 103 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj = 25 °C prior to surge.

2003 Mar 20 6

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 2000 MBH282

100 Tj (oC)

(µA) 10−2 10−1 102 (1) (2) (1) V R = 90 V; maximum values. (2) V R = 90 V; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. handbook, halfpage 01 0 2 0 3 0 VR (V) Cd (pF) MGD003 handbook, full pagewidth t rr (1) IF t output signal tr t t p 10% 90%VR input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.7 Reverse recovery voltage test circuit and waveforms. (1) I R = 3 mA.

2003 Mar 20 7

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 PACKAGE OUTLINE UNIT A1 max. bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X HE E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT2 3

2003 Mar 20 8

NXP Semiconductors Product data sheet General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Printed in The Netherlands 613514/05/pp9 Date of release: 2003 Mar 20 Document order number: 9397 750 10962