BAS316 DSK | Alldatasheet
Document overview
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Technical content
Silicon Epitaxial Planar Diode B A S 3 1 6
FEATURES
z Very small plastic SMD package. z High switching speed:max.4ns z Continuous reverse voltage:max.100v z Repetitive peak reverse voltage:max.100v z Repetitive peak forward current:max.500mA A P P L I C A T I O N S SOD-323 z Surface mount fast switching diode
ORDERING INFORMATION
Type No. Marking Package Code BAS316 A6 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Unit DC Reverse Voltage V R 100 V Forward Current I F 300 mA Power Dissipation P d 200 mW Junction and Storage Temperature Rage T j STG -65 to+150 ℃ Diode Semiconductor Korea www.diode.kr
Silicon Epitaxial Planar Diode B A S 3 1 6
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V (BR)R 100 - V I R =100μA Forward Voltage V F 0.62 0.715 0.855 1.0 1.25 V I F =1.0mA I F =10mA I F =50mA I F =150mA Reverse Current I R - 1.0 0.03 μA V R =75V V R =25V Capacitance between terminals C T - 1.5 pF V R =0,f=1.0MHz Reverse Recovery Time t rr - 4.0 ns I F R =10mA,R L =100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Diode B A S 3 1 6 www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Diode B A S 3 1 6 PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 Dim Min Max A 1.275 1.325 B 1.675 1.725 C 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J 0.1 Typical K 2.6 2.7 All Dimensions in mm E K H D C B A J SOLDERING FOOTPRINT Unit ：mm
PACKAGE INFORMATION
BAS316 SOD-323 3000/Tape&Reel