BAS19 GE | Alldatasheet
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Technical content
FEATURES
Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) T op View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified SOT -23 Symbol Value Unit Continuous Reverse Voltage BAS19 BAS20 BAS21 V R VR VR 100 150 200 V V V Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 V RRM VRRM VRRM 120 200 250 V V V Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 s IFSM IFSM 2.5 0.5 A A Average Rectified Forward Current (averaged over any 20 ms period) IF(AV) 2001) mA Forward DC Current at Tamb = 25 °C I F 2002) mA Repetitive Peak Forward Current I FRM 625 mA Power Dissipation up to Tamb = 25 °C P tot 2002) mW Junction T emperature T j 150 °C Storage Temperature Range T S – 65 to +150 °C 1) Measured under pulse conditions; Pulse time = tp ≤ 0.3 ms. 2) Device on fiberglass substrate, see layout. T op View BAS19, BAS20, BAS21 Silicon Planar Epitaxial High-Speed Diodes For switching and general purpose applications. These diodes are also available in other case styles includ- ing: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case with the type designation BAV101 - BAV103, and the DO-35 case with the type desig- nation BAV19 - BAV21. Marking BAS19 = A8 BAS20 = A81 BAS21 = A82
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified BAS19, BAS20, BAS21 Symbol Min. T yp. Max. Unit Forward Voltage at IF = 100 mA at IF = 200 mA VF VF 1.0 1.25 V V Leakage Current at VR = VRmax at VR = VRmax ; Tj = 150 °C IR IR 100 100 nA µA Dynamic Forward Resistance at IF = 10 mA rf –5– Ω Capacitance at VR = 0, f = 1 MHz C tot ––5p F Reverse Recovery Time (see figures) from IF = 30 mA through IR = 30 mA to IR = 3 mA, R L = 100 Ω trr ––5 0 n s Thermal Resistance Junction to Ambient Air RthJA – – 430 2) K/W 2) Device on fiberglass substrate, see layout. Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)
Test Circuit and Waveforms BAS19, BAS20, BAS21 Test circuit Waveforms; IR = 3 mA Input Signal – total pulse duration t p(tot) = 2 µs – duty factor δ = 0.0025 – rise time of reverse pulse t r = 0.6 ns – reverse pulse duration t p = 100 ns Oscilloscope – rise time t r = 0.35 ns – circuit capacitance* C < 1 pF *C = oscilloscope input capacitance + parasitic capacitance