BAS19 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Silicon Switching Diodes BAS 19 … BAS 21 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAS 19 BAS 20 BAS 21 Q62702-A95 Q62702-A113 Q62702-A79 JPs JRs JSs SOT-23 Parameter Symbol Values BAS 19 BAS 20 BAS 21 Unit Reverse voltage VR V Peak forward current IFM Forward current IF mA Junction temperature Tj ˚C Total power dissipation,TS = 70 ˚C Ptot mW Storage temperature range Tstg Peak reverse voltage VRM 100 150 200 120 200 250 250 625 350 150 – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA K/W Junction - soldering point Rth JS ≤ 300 ≤ 230 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- High-speed, high-voltage switch 07.94
… BAS 21
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator:tp = 100 ns,D = 0.05 Oscillograph: R = 50Ω tr = 0.6 ns,Rj = 50Ω tr = 0.35 ns C ≤ 1p F VBreakdown voltage1) I(BR) = 100µA BAS 19 BAS 20 BAS 21 V (BR) 120 200 250 Forward voltage IF = 100 mA IF = 200 mA VF 1.25 nA µA Reverse current VR =VR max VR =VR max;Tj = 150 ˚C IR 100 100 pFDiode capacitance VR = 0 V,f = 1 MHz C D ––5 nsReverse recovery time IF = 30 mA,IR = 30 mA,RL = 100Ω measured atIR = 3 mA trr ––5 0 UnitValuesParameter Symbol min. typ. max. DC characteristics AC characteristics 1) Pulse test:tp ≤ 300 µs, D = 2 %.
… BAS 21 Forward currentIF = f(TA*;TS) * Package mounted on epoxy Forward currentIF = f(VF) Reverse currentIR = f(TA) Forward voltageVF = f(TA)
… BAS 21 Peak forward currentIFM = f(t) Reverse voltageVR = f(TA)