BAS19 INFINEON | Alldatasheet
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BAS19...BAS21 VPS05161 Silicon Switching Diodes /G01/G02 High-speed, high-voltage switching applications EHA07002 Type Marking Pin Configuration Package BAS19 BAS20 BAS21 JPs JRs JSs 1 = A 1 = A 1 = A 2 = n.c. 2 = n.c. 2 = n.c. 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage BAS19 BAS20 BAS21 VR 100 150 200 V Peak reverse voltage- BAS19 BAS20 BAS21 VRM 120 200 250 Forward current IF 250 mA Peak forward current IFM 625 Total power dissipation T S = 70 °C Ptot 350 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS /G01 230 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BAS19...BAS21 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I (BR) = 100 µA, BAS19 I(BR) = 100 µA, BAS20 I(BR) = 100 µA, BAS21 V(BR) 120 200 250 V Reverse current VR = VRmax VR = VRmax, TA = 150 °C IR 0.1 100 µA Forward voltage I F = 100 mA IF = 200 mA VF 1.25 V AC Characteristics Diode capacitance- VR = 0 V, f = 1 MHz CT - - 5 pF Reverse recovery time IF = 30 mA, IR = 30 mA, measured at IR = 3 mA, RL = 100 /G01 trr - - 50 ns Test circuit for reverse recovery time EHN00018 OscillographΙF D.U.T. Pulse generator: tp = 1 /G02 s, D = 0.05, tr = 0.6 ns, Ri = 50 /G03 Oscillograph: R = 50/G03 , tr = 0.35 ns, C /G01 1 pF
BAS19...BAS21 Reverse current IR = /G04 (TA) VR = Parameter 10 0 50 100 150 BAS 19...21 EHB00027 µ TA ΙR max typ. A 10-1 101 10 2 Forward Voltage VF = /G04 (TA) IF = Parameter 0.00 BAS 19...21 EHB00029 TA VF 0.5 1.0 V 1.5 50 100 150 FΙ = 625 mA mA250 100 mA 10 mA Forward current IF = /G04 (VF) TA = 25 °C 0.00 EHB00028BAS 19...21 Ι V F F 100 200 300 400 500 600 700 mA 800 0.5 1.0 V 1.5 Peak forward current IFM = /G04 (tp) TA = 25 °C EHB00032 -610 D = 0.005 0.01 0.02 T D = T BAS 19...21 10-5 10-4 10-3 10-2 10-1 100s tp tp 0.05 0.1 0.2 t 10-2 AFM Ι
BAS19...BAS21 Reverse voltage VR = /G04 (TA) 100 300 0 50 100 150 BAS 19...21 EHB00031 V TA 200 V R BAS 21 BAS 20 BAS 19 Permissible Pulse Load IFmax/ IFDC = /G04 (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP 0 10 1 10 2 10 IFmax/IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = /G04 (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tP -1 10 0 10 1 10 2 10 3 10 RthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005