BAS116 HDSEMI | Alldatasheet
Document overview
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Technical content
Features
Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） JV Switching Diodes SOT-23 Plastic-Encapsulate Diodes
Applications
Low leakag e current applications Medium speed switching times Extreme fast switches Parameter Symbol Limit Unit Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R Forward Continuous Current I FM 200 mA Power Dissipation P D 225 mW Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ V Forward Surge Current @t=8.3ms Non-Repetitive Peak I FSM 2.0 A Parameter Symbol Min Typ Max Unit Conditions Reverse breakdown voltage V (BR)
75 V I
R =100μA V
0.9 V I
F =1mA V
1 V I
F =10mA V
1.1 V I
F =50mA Forward voltage V
1.25 V I
F =150mA Reverse current I R 5 nA V R =75V Diode capacitance C tot 2 pF V R =0V,f=1MHz Reverse recovery time t rr 3 μs I F R =10mA,I rr =0.1×I R , R L =100Ω
H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 150 225 300 100 0 153 0 456 07 5 0.2 0.4 0.6 0.8 T a =25 f=1MHz Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 200 Forward Characteristics FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (mA) T a =25 T a =100 Reverse Characteristics REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (nA) T a =25 T a =100
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor