BAR99 SIEMENS | Alldatasheet
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Technical content
Silicon Switching Diode BAR 99 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAR 99 Q62702-A388JGs SOT-23 Parameter Symbol Values Unit Reverse voltage VR 70 V Forward current IF 250 mA Junction temperature Tj 150 ˚C Total power dissipation,TS =5 4˚ C Ptot 370 mW Storage temperature range Tstg – 65 … + 150 Peak reverse voltage VRM 70 Surge forward current,t = 1µs IFS 4.5 A Thermal Resistance Junction - ambient2) Rth JA ≤ 330 K/W Junction - soldering point Rth JS ≤ 260 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- For high-speed switching 5.91
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator:tp = 100 ns,D = 0.05 Oscillograph: R = 50Ω tr = 0.6 ns,Rj = 50Ω tr = 0.35 ns C ≤ 1p F VBreakdown voltage I(BR) = 100µA V(BR) 70 – – mVForward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF 715 855 1000 1250 µAReverse current VR = 70 V VR = 25 V,TA = 150 ˚C VR = 70 V,TA = 150 ˚C IR 2.5 pFDiode capacitance VR = 0 V,f = 1 MHz C D – – 1.5 nsReverse recovery time IF = 10 mA,IR = 10 mA,RL = 100Ω measured atIR = 1 mA trr ––6 UnitValuesParameter Symbol min. typ. max. DC characteristics AC characteristics
Forward currentIF = f(TA*;TS) * Package mounted on epoxy Forward currentIF = f(VF) TA = 25 ˚C Reverse currentIR = f(TA) Peak forward currentIFM = f(t) TA = 25 ˚C
Forward voltageVF = f(TA)